IRLR3105PBF International Rectifier, IRLR3105PBF Datasheet

MOSFET N-CH 55V 25A DPAK

IRLR3105PBF

Manufacturer Part Number
IRLR3105PBF
Description
MOSFET N-CH 55V 25A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR3105PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
37 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Input Capacitance (ciss) @ Vds
710pF @ 25V
Power - Max
57W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
25A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
37mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Peak Reflow Compatible (260 C)
Yes
Configuration
Single
Resistance Drain-source Rds (on)
43 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
25 A
Power Dissipation
57 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
37 ns
Gate Charge Qg
13.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
57 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLR3105PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLR3105PBF
Manufacturer:
IR
Quantity:
46 000
Part Number:
IRLR3105PBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLR3105PBF
Manufacturer:
IR
Quantity:
20 000
Description
Absolute Maximum Ratings
Thermal Resistance
Features
This HEXFET ® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make this
design an extremely efficient and reliable device for use in a wide
variety of applications.
The D-Pak is designed for surface mounting using vapor phase,
infrared, or wave soldering techniques. The straight lead version
(IRLU series) is for through-hole mounting applications. Power
dissipation levels up to 1.5 watts are possible in typical surface
mount applications.
I
I
I
P
V
E
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
DM
AR
STG
D
GS
AS
AS
AR
J
θJC
θJA
θJA
@ T
@ T
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(tested)
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET
IRLR3105PbF
D-Pak
-55 to + 175
S
D
Max.
0.38
± 16
100
3.4
57
25
18
61
94
IRLR3105PbF
IRLU3105PbF
®
R
Power MOSFET
DS(on)
Max.
V
2.65
110
50
DSS
I
D
IRLU3105PbF
= 25A
I-Pak
PD - 95553B
= 0.037Ω
= 55V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
W
A
V
A
1

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IRLR3105PBF Summary of contents

Page 1

... S D-Pak IRLR3105PbF Max. @ 10V GS @ 10V GS 0.38 See Fig.12a, 12b, 15 175 300 (1.6mm from case ) Typ. ––– ––– ––– 95553B IRLR3105PbF IRLU3105PbF ® Power MOSFET V = 55V DSS R = 0.037Ω DS(on 25A D I-Pak IRLU3105PbF Units 25 18 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 5.0V 100 3.0V 2.7V 2.5V 2.25V BOTTOM 2. 0.1 2.0V 20µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100.00 10.00 ...

Page 4

0V MHZ C iss = rss = oss = 1200 Ciss 800 Coss 400 Crss 0 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth Single Pulse BOTT OM 50% Duty Cycle 15A ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position indicates ...

Page 10

EXAMPLE : T HIS IS AN IRF U120 WIT H ASS EMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 SEMBLY LINE "A" Note: "P" embly line pos ition indicates Lead-Free" OR ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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