IRFH5306TRPBF International Rectifier, IRFH5306TRPBF Datasheet - Page 3

MOSFET N-CH 30V 15A 5X6 PQFN

IRFH5306TRPBF

Manufacturer Part Number
IRFH5306TRPBF
Description
MOSFET N-CH 30V 15A 5X6 PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5306TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.1 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
1125pF @ 15V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-PQFN, 8-PowerQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
13.3 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
45 A
Power Dissipation
26 W
Gate Charge Qg
7.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5306TRPBF
Manufacturer:
FREESCALE
Quantity:
1 210
Part Number:
IRFH5306TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
10000
1000
100
100
0.1
100
Fig 3. Typical Transfer Characteristics
1.0
10
10
Fig 1. Typical Output Characteristics
10
1
0.1
1
1
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
C iss
C rss
C oss
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 150°C
2.7V
2
1
V DS = 15V
≤60µs PULSE WIDTH
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
10
3
T J = 25°C
10
TOP
BOTTOM
4
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
100
100
5
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
100
14.0
12.0
10.0
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8.0
6.0
4.0
2.0
0.0
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 15A
V GS = 10V
I D = 15A
2
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
4
Q G , Total Gate Charge (nC)
2.7V
6
1
V DS = 24V
V DS = 15V
8
≤ 60µs PULSE WIDTH
Tj = 150°C
10 12 14 16 18 20
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
100
3

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