IRFH5306TRPBF International Rectifier, IRFH5306TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5306TRPBF
• Description: MOSFET N-CH 30V 15A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5306TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1125pF @ 15V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 26 W
• Gate Charge Qg: 7.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
25
20
15
10
Fig 15a. Switching Time Test Circuit
5
0
R G
20V
V DS
T J = 25°C
2
V GS, Gate -to -Source Voltage (V)
t p
4
≤ 0.1
≤ 1
I AS
D.U.T
0.01 Ω
L
6
8
T J = 125°C
10
15V
DRIVER
12
I D = 15A
+
-
+
-
V DD
14
A
16
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
200
180
160
140
120
100
90%
V
80
60
40
20
10%
V
0
I
DS
AS
GS
25
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
t p
r
75
t
100
d(off)
V
(BR)DSS
TOP
BOTTOM 15A
t
f
125
I D
3.9A
7.7A
150
5