MOSFET N-CH 500V 3A DPAK

STD4NK50ZT4

Manufacturer Part NumberSTD4NK50ZT4
DescriptionMOSFET N-CH 500V 3A DPAK
ManufacturerSTMicroelectronics
SeriesSuperMESH™
STD4NK50ZT4 datasheet
 


Specifications of STD4NK50ZT4

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2.7 Ohm @ 1.5A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C3AVgs(th) (max) @ Id4.5V @ 50µA
Gate Charge (qg) @ Vgs12nC @ 10VInput Capacitance (ciss) @ Vds310pF @ 25V
Power - Max45WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)2.7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)1.5 SDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current3 A
Power Dissipation45000 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-4103-2
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N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET
TYPE
V
R
DSS
DS(on)
STP4NK50Z
500 V
< 2.7
STP4NK50ZFP
500 V
< 2.7
STD4NK50Z
500 V
< 2.7
STD4NK50Z-1
500 V
< 2.7
TYPICAL R
(on) = 2.3
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
SALES TYPE
STP4NK50Z
STP4NK50ZFP
STD4NK50ZT4
STD4NK50Z-1
December 2002
STP4NK50Z - STP4NK50ZFP
STD4NK50Z - STD4NK50Z-1
I
Pw
D
3 A
45 W
3 A
20 W
3 A
45 W
3 A
45 W
INTERNAL SCHEMATIC DIAGRAM
MARKING
PACKAGE
P4NK50Z
TO-220
P4NK50ZFP
TO-220FP
D4NK50Z
DPAK
D4NK50Z
IPAK
TO-220
3
1
DPAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
3
2
1
TO-220FP
3
2
1
IPAK
1/13

STD4NK50ZT4 Summary of contents

  • Page 1

    ... Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE STP4NK50Z STP4NK50ZFP STD4NK50ZT4 STD4NK50Z-1 December 2002 STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z ...

  • Page 2

    STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous ...

  • Page 3

    ELECTRICAL CHARACTERISTICS (T ON/OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Gate Threshold Voltage GS(th) R Static Drain-source On DS(on) Resistance ...

  • Page 4

    STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Safe Operating For TO-220 Safe Operating Area For TO-220FP Safe Operating Area For DPAK/IPAK 4/13 Thermal Impedance For TO-220 Thermal Impedance For TO-220FP Thermal Impedance For DPAK/IPAK ...

  • Page 5

    Output Characteristics Transconductance Gate Charge vs Gate-source Voltage STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations 5/13 ...

  • Page 6

    STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature ...

  • Page 7

    Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Fig. 2: Unclamped Inductive Waveform ...

  • Page 8

    STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 ...

  • Page 9

    STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. TYP A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 ...

  • Page 10

    STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 10/13 TO-252 (DPAK) ...

  • Page 11

    STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4.4 H ...

  • Page 12

    STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 ...

  • Page 13

    ... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...