STD4NK50ZT4 STMicroelectronics, STD4NK50ZT4 Datasheet

MOSFET N-CH 500V 3A DPAK

STD4NK50ZT4

Manufacturer Part Number
STD4NK50ZT4
Description
MOSFET N-CH 500V 3A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STD4NK50ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
310pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4103-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD4NK50ZT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STD4NK50ZT4
Manufacturer:
ST
Quantity:
20 000
Part Number:
STD4NK50ZT4G
Manufacturer:
ST
0
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
ORDERING INFORMATION
December 2002
STP4NK50Z
STP4NK50ZFP
STD4NK50Z
STD4NK50Z-1
N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAK
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
STP4NK50ZFP
STD4NK50ZT4
STD4NK50Z-1
TYPE
SALES TYPE
STP4NK50Z
DS
(on) = 2.3
500 V
500 V
500 V
500 V
V
DSS
Zener-Protected SuperMESH™Power MOSFET
R
< 2.7
< 2.7
< 2.7
< 2.7
DS(on)
P4NK50ZFP
MARKING
P4NK50Z
D4NK50Z
D4NK50Z
3 A
3 A
3 A
3 A
I
D
STP4NK50Z - STP4NK50ZFP
STD4NK50Z - STD4NK50Z-1
45 W
20 W
45 W
45 W
Pw
PACKAGE
TO-220FP
TO-220
DPAK
IPAK
INTERNAL SCHEMATIC DIAGRAM
TO-220
DPAK
1
3
TAPE & REEL
PACKAGING
TUBE
TUBE
TUBE
TO-220FP
IPAK
1
1
2
2
1/13
3
3

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STD4NK50ZT4 Summary of contents

Page 1

... Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE STP4NK50Z STP4NK50ZFP STD4NK50ZT4 STD4NK50Z-1 December 2002 STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z ...

Page 2

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous ...

Page 3

ELECTRICAL CHARACTERISTICS (T ON/OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Gate Threshold Voltage GS(th) R Static Drain-source On DS(on) Resistance ...

Page 4

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Safe Operating For TO-220 Safe Operating Area For TO-220FP Safe Operating Area For DPAK/IPAK 4/13 Thermal Impedance For TO-220 Thermal Impedance For TO-220FP Thermal Impedance For DPAK/IPAK ...

Page 5

Output Characteristics Transconductance Gate Charge vs Gate-source Voltage STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations 5/13 ...

Page 6

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 Fig. 2: Unclamped Inductive Waveform ...

Page 8

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 ...

Page 9

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. TYP A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 ...

Page 10

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 10/13 TO-252 (DPAK) ...

Page 11

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4.4 H ...

Page 12

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 ...

Page 13

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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