STD4NK50ZT4 STMicroelectronics, STD4NK50ZT4 Datasheet - Page 2

MOSFET N-CH 500V 3A DPAK

STD4NK50ZT4

Manufacturer Part Number
STD4NK50ZT4
Description
MOSFET N-CH 500V 3A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STD4NK50ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
310pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4103-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD4NK50ZT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STD4NK50ZT4
Manufacturer:
ST
Quantity:
20 000
Part Number:
STD4NK50ZT4G
Manufacturer:
ST
0
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/13
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
AR
ISO
T
T
stg
DS
GS
AS
GSO
D
D
3 A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case (Max)
Thermal Resistance Junction-ambient (Max)
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
j
DD
= 25 °C, I
V
(BR)DSS
Parameter
D
C
GS
, T
= I
= 25°C
GS
j
j
= 20 k )
max)
AR
Parameter
= 0)
T
, V
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
STP4NK50Z
0.36
1.9
12
45
3
-
TO-220
2.78
STP4NK50ZFP
-55 to 150
62.5
1.9 (*)
Value
12 (*)
2800
2500
Min.
± 30
3 (*)
0.16
500
500
4.5
30
20
TO-220FP
300
6.25
Max Value
120
Typ.
3
STD4NK50Z-1
STD4NK50Z
1.9 (*)
12 (*)
3 (*)
0.36
45
DPAK
-
IPAK
2.78
100
Max.
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
V
A
V

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