IRFH5304TRPBF International Rectifier, IRFH5304TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5304TRPBF
• Description: MOSFET N-CH 30V 22A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5304TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 2360pF @ 10V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 16 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000.0
100.0
10.0
80
60
40
20
1.0
0.1
0
25
0.2
Fig 9. Maximum Drain Current Vs.
0.001
Case (Bottom) Temperature
T J = 150°C
0.01
0.1
0.4
V SD , Source-to-Drain Voltage (V)
10
1
50
1E-006
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
T C , CaseTemperature (°C)
0.6
D = 0.50
75
0.20
0.10
0.05
0.02
0.01
T J = 25°C
0.8
SINGLE PULSE
( THERMAL RESPONSE )
1.0
100
1E-005
1.2
V GS = 0V
125
1.4
1.6
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
10000
Fig 10. Threshold Voltage Vs. Temperature
0.001
1000
3.0
2.5
2.0
1.5
1.0
0.5
100
0.1
10
1
-75
Fig 8. Maximum Safe Operating Area
0.1
I D = 1.0A
I D = 1.0mA
I D = 250μA
I D = 50μA
Tc = 25°C
Tj = 150°C
Single Pulse
-50
V DS , Drain-to-Source Voltage (V)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
-25
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1
0.01
25
10msec
50
1msec
10
75
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100
100μsec
0.1
125
100
150