MOSFET N-CH 60V 16A D2PAK

STB16NF06LT4

Manufacturer Part NumberSTB16NF06LT4
DescriptionMOSFET N-CH 60V 16A D2PAK
ManufacturerSTMicroelectronics
SeriesSTripFET™
STB16NF06LT4 datasheet
 

Specifications of STB16NF06LT4

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs90 mOhm @ 8A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C16AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs10nC @ 4.5VInput Capacitance (ciss) @ Vds345pF @ 25V
Power - Max45WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.09 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)17 SDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 16 VContinuous Drain Current16 A
Power Dissipation45000 mWMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Continuous Drain Current Id8ADrain Source Voltage Vds60V
On Resistance Rds(on)70mohmRds(on) Test Voltage Vgs16V
Threshold Voltage Vgs Typ1VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-4322-2
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
Page 1/13

Download datasheet (409Kb)Embed
Next
General features
Type
V
DSS
STB16NF06L
60V
Exceptional dv/dt capability
Low gate charge at 100°C
Logic level device
Low threshold drive
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
Order codes
Part number
STB16NF06L
June 2006
N-channel 60V - 0.07Ω - 16A - D
STripFET™ Power MOSFET
R
I
DS(on)
D
<0.09Ω
16A
Internal schematic diagram
Marking
B16NF06L
Rev 2
STB16NF06L
3
1
2
D
PAK
Package
Packaging
2
D
PAK
Tape & reel
2
PAK
1/13
www.st.com
13

STB16NF06LT4 Summary of contents

  • Page 1

    General features Type V DSS STB16NF06L 60V ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Logic level device ■ Low threshold drive Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based ...

  • Page 2

    Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 3

    STB16NF06L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) ...

  • Page 4

    Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

  • Page 5

    STB16NF06L Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...

  • Page 6

    Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STB16NF06L ...

  • Page 7

    STB16NF06L Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/13 ...

  • Page 8

    Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/13 Figure 13. Gate charge test circuit Figure 15. ...

  • Page 9

    STB16NF06L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on ...

  • Page 10

    Package mechanical data DIM 10/ PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 ...

  • Page 11

    STB16NF06L 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 ...

  • Page 12

    Revision history 6 Revision history Table 6. Revision history Date 21-Jun-2004 26-Jun-2006 12/13 Revision 1 First version 2 New template, no content change STB16NF06L Changes ...

  • Page 13

    ... STB16NF06L Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...