MOSFET N-CH 30V 8.3A 8-SOIC

 

IRF7807VD2TRPBF

Manufacturer Part NumberIRF7807VD2TRPBF
DescriptionMOSFET N-CH 30V 8.3A 8-SOIC
ManufacturerInternational Rectifier
SeriesFETKY™
IRF7807VD2TRPBF datasheets

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Specifications of IRF7807VD2TRPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureDiode (Isolated)
Rds On (max) @ Id, Vgs25 mOhm @ 7A, 4.5VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C8.3AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs14nC @ 4.5VPower - Max2.5W
Mounting TypeSurface MountPackage / Case8-SOIC (3.9mm Width)
Transistor PolarityN-ChannelResistance Drain-source Rds (on)25 mOhms
Drain-source Breakdown Voltage30 VGate-source Breakdown Voltage20 V
Continuous Drain Current8.3 APower Dissipation2.5 W
Mounting StyleSMD/SMTGate Charge Qg9.5 nC
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesIRF7807VD2PBFTR
IRF7807VD2TRPBF
IRF7807VD2TRPBFTR
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®
• Co-Pack N-channel HEXFET
Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
• Lead-Free
Description
The FETKY
™
family of Co-Pack HEXFET
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
≥ 4.5V)
Current (V
GS
Pulsed Drain Current
Power Dissipationƒ
Schottky and Body Diode
Average ForwardCurrent„
Junction & Storage Temperature Range
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
www.irf.com
FETKY™ MOSFET / SCHOTTKY DIODE
SO-8
®
MOSFETs and
DEVICE CHARACTERISTICS…
R
Q
Q
Q
Symbol
V
DS
V
GS
25°C
I
D
70°C
I
DM
25°C
P
D
70°C
25°C
I
(AV)
F
70°C
T
, T
J
STG
R
θJA
R
θJL
PD-95291
IRF7807VD2PbF
1
8
A/S
2
7
A/S
3
6
A/S
4
5
G
Top View
IRF7807VD2
17mΩ
DS
(on)
9.5nC
G
3.4nC
sw
12nC
oss
Max.
Units
30
V
±20
8.3
6.6
A
66
2.5
W
1.6
3.7
A
2.3
–55 to 150
°C
Max.
Units
50
°C/W
20
°C/W
10/08/04
K/D
K/D
K/D
K/D
D
1

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IRF7807VD2TRPBF Summary of contents

  • Page 1

    ... HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...

  • Page 2

    IRF7807VD2PbF Electrical Characteristics Parameter Drain-to-Source BV DSS Breakdown Voltage Static Drain-Source R DS (on) on Resistance Gate Threshold Voltage V GS(th) Drain-Source Leakage I DSS Current Current* Gate-Source Leakage I GSS Current* Total Gate Charge Pre-Vth Q GS1 ...

  • Page 3

    Power MOSFET Selection for DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control ...

  • Page 4

    IRF7807VD2PbF For the synchronous MOSFET Q2, R portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off ...

  • Page 5

    1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J Fig 5. Normalized On-Resistance Vs. Temperature 70 VGS TOP 4.5V 60 3.5V ...

  • Page 6

    IRF7807VD2PbF 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.001 0. Rectangular Pulse ...

  • Page 7

    MOSFET , Body Diode & Schottky Diode Characteristics 100 Tj = 125° 25° 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - Fig Typical Forward Voltage Drop Characteristics www.irf.com ...

  • Page 8

    IRF7807VD2PbF SO-8 (Fetky) Package Outline 0.25 [.010 NOT DIMENS IONING & TOLERANCING PER ASME ...

  • Page 9

    SO-8 (Fetky) Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING ...

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