IRF7807VD2TRPBF International Rectifier, IRF7807VD2TRPBF Datasheet

MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807VD2TRPBF

Manufacturer Part Number
IRF7807VD2TRPBF
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7807VD2TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
25 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.3 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
9.5 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7807VD2PBFTR
IRF7807VD2TRPBF
IRF7807VD2TRPBFTR
Description
The FETKY
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Thermal Resistance
• Co-Pack N-channel HEXFET
• Ideal for Synchronous Rectifiers in DC-DC
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
• Lead-Free
Absolute Maximum Ratings
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain Current
Power Dissipationƒ
Schottky and Body Diode
Average ForwardCurrent„
Junction & Storage Temperature Range
and Schottky Diode
Converters Up to 5A Output
GS
family of Co-Pack HEXFET
≥ 4.5V)
®
Power MOSFET
25°C
70°C
25°C
70°C
70°C
25°C
®
MOSFETs and
Symbol
T
I
F
J
R
R
V
V
, T
I
P
(AV)
I
DM
θJA
θJL
DS
GS
D
D
STG
FETKY™ MOSFET / SCHOTTKY DIODE
SO-8
DEVICE CHARACTERISTICS…
R
Q
Q
Q
IRF7807VD2PbF
DS
G
sw
oss
–55 to 150
(on)
Max.
Max.
±20
6.6
1.6
2.3
8.3
2.5
3.7
50
20
30
66
IRF7807VD2
17mΩ
9.5nC
3.4nC
A/S
A/S
A/S
12nC
G
1
2
3
4
Top View
PD-95291
Units
Units
°C/W
°C/W
°C
A
W
8
6
5
V
7
A
10/08/04
K/D
K/D
K/D
K/D
D
1

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IRF7807VD2TRPBF Summary of contents

Page 1

... HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...

Page 2

IRF7807VD2PbF Electrical Characteristics Parameter Drain-to-Source BV DSS Breakdown Voltage Static Drain-Source R DS (on) on Resistance Gate Threshold Voltage V GS(th) Drain-Source Leakage I DSS Current Current* Gate-Source Leakage I GSS Current* Total Gate Charge Pre-Vth Q GS1 ...

Page 3

Power MOSFET Selection for DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control ...

Page 4

IRF7807VD2PbF For the synchronous MOSFET Q2, R portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off ...

Page 5

1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J Fig 5. Normalized On-Resistance Vs. Temperature 70 VGS TOP 4.5V 60 3.5V ...

Page 6

IRF7807VD2PbF 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.001 0. Rectangular Pulse ...

Page 7

MOSFET , Body Diode & Schottky Diode Characteristics 100 Tj = 125° 25° 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - Fig Typical Forward Voltage Drop Characteristics www.irf.com ...

Page 8

IRF7807VD2PbF SO-8 (Fetky) Package Outline 0.25 [.010 NOT DIMENS IONING & TOLERANCING PER ASME ...

Page 9

SO-8 (Fetky) Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING ...

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