IXTP2R4N50P IXYS, IXTP2R4N50P Datasheet
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Manufacturer Part Number
IXTP2R4N50P
Description
MOSFET N-CH 500V 2.4A TO-220
Specifications of IXTP2R4N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.75 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
5.5V @ 25µA
Gate Charge (qg) @ Vgs
6.1nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
55W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.75 Ohms
Forward Transconductance Gfs (max / Min)
2.5 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.4 A
Power Dissipation
55 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
2.4
Rds(on), Max, Tj=25°c, (?)
3.75
Ciss, Typ, (pf)
240
Qg, Typ, (nc)
6.1
Trr, Typ, (ns)
400
Pd, (w)
55
Rthjc, Max, (k/w)
2.25
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
SOLD
DSS
DGR
GSM
GSM
AR
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
Continuous
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-252
Test Conditions
V
V
V
V
V
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ± 30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
D
= 250 μA
= 25 μA
= 0.5 I
G
DS
= 50 Ω
= 0 V
D25
(TO-220)
GS
, Note 1
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXTP 2R4N50P
IXTY 2R4N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 40
± 30
300
500
500
100
150
260
2.4
4.5
2.4
0.8
10
55
8
4
± 50
3.75
Max.
5.5
50
1
V/ns
mJ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
TO-220 (IXTP)
Features
Advantages
TO-252 AA (IXTY)
International standard packageS
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G = Gate
S = Source
DS(on)
DSS
G
D
G
= 500
=
≤ ≤ ≤ ≤ ≤
S
S
3.75
2.4
D = Drain
TAB = Drain
(TAB)
DS99445E(04/06)
(TAB)
Ω Ω Ω Ω Ω
A
V
Related parts for IXTP2R4N50P
IXTP2R4N50P Summary of contents
... I GS(th ± GSS DSS DS DSS 0.5 I DS(on D25 © 2006 IXYS All rights reserved IXTP 2R4N50P IXTY 2R4N50P Maximum Ratings 500 = 1 MΩ 500 GS ± 40 ± 30 2.4 4.5 JM 2.4 8 100 ≤ DSS 55 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 4 ...
... V = 100 Pulse test, t ≤ 300 μs, duty cycle d ≤ Note 1: IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C unless otherwise specified) J Min ...
... Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3 10V GS 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0 0.5 1 1 Amperes D © 2006 IXYS All rights reserved C 4.5 4 3 1 3.4 3.1 7V 2.8 2.5 6V 2.2 1.9 1.6 1.3 ...
... olts G S Fig. 9. Source Cur Source -To-Drain V oltage º 125 0.4 0.5 0.6 0 olts S D Fig. 11. Capacitance 1000 f = 1MH z 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions. 4 3.5 3 2.5 2 1 º 0 ...
... Fig. 13. M axim um Trans ie nt The tance 10.00 1.00 0.10 0.01 0.00001 0.0001 © 2006 IXYS All rights reserved 0.001 0.01 Pulse Width - Seconds IXTP 2R4N50P IXTY 2R4N50P 0 ...
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