IRLR3103TRPBF International Rectifier, IRLR3103TRPBF Datasheet

MOSFET N-CH 30V 55A DPAK

IRLR3103TRPBF

Manufacturer Part Number
IRLR3103TRPBF
Description
MOSFET N-CH 30V 55A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR3103TRPBF.pdf (11 pages)

Specifications of IRLR3103TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 33A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 4.5V
Input Capacitance (ciss) @ Vds
1600pF @ 25V
Power - Max
107W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
55A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
24 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
46 A
Power Dissipation
69 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
54 ns
Gate Charge Qg
33.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
210 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLR3103PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRLR3103TRPBF
Manufacturer:
International Rectifier
Quantity:
1 782
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRLR3103TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
IRLR3103TRPBF
0
Company:
H&T Electronics H&T Electronics
Part Number:
IRLR3103TRPBF
Quantity:
9 000
l
l
l
l
l
l
l
l
Description
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θJA
θJA
@ T
@ T
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3103)
Straight Lead (IRLU3103)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚‡
Avalanche Current‡
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
IRLR/U3103PbF
Typ.
300 (1.6mm from case )
–––
–––
–––
TO-252AA
HEXFET
D-PAK
-55 to + 175
S
D
Max.
55…
39…
0.71
220
107
± 16
240
5.0
34
11
TO-251AA
®
R
I-PAK
DS(on)
Power MOSFET
V
Max.
110
I
1.4
50
D
DSS
PD - 95085A
= 55A
= 0.019Ω
= 30V
…
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

Related parts for IRLR3103TRPBF

Image
Part Number
Description
Manufacturer
Datasheet
Request R
IRLR3103
Part Number:
IRLR3103
Description:
Manufacturer:
International Rectifier Corp.
80CNQ045
Part Number:
80CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
80CNQ045.pdf (6 pages)
82CNQ030
Part Number:
82CNQ030
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
82CNQ030.pdf (6 pages)
85CNQ015
Part Number:
85CNQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
85CNQ015.pdf (8 pages)
200CNQ035
Part Number:
200CNQ035
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
200CNQ035.pdf (5 pages)
120NQ045
Part Number:
120NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
120NQ035R.pdf (5 pages)
400CNQ045
Part Number:
400CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
400CNQ045.pdf (4 pages)
63CNQ100
Part Number:
63CNQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
63CNQ100.pdf (2 pages)
123NQ080
Part Number:
123NQ080
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
301CNQ045
Part Number:
301CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)
125NQ015
Part Number:
125NQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
125NQ015.pdf (4 pages)
301CNQ040
Part Number:
301CNQ040
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)
123NQ100
Part Number:
123NQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
241NQ045
Part Number:
241NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
241NQ045.pdf (5 pages)
181NQ045
Part Number:
181NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
181NQ045.pdf (4 pages)

IRLR3103TRPBF Summary of contents

Page 1

... Fully Avalanche Rated l Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

IRLR/U3103PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 2.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = 25°C ...

Page 4

IRLR/U3103PbF 3200 1MHz iss gs gd 2800 rss oss ds gd iss 2400 C 2000 oss 1600 ...

Page 5

LIMITED BY PACKAGE 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE ...

Page 6

IRLR/U3103PbF D.U 10V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS www.irf.com Peak Diode Recovery dv/dt ...

Page 8

IRLR/U3103PbF EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 EMBLY LINE "A" Note: "P" sembly line pos ition indicates "Lead-Free" ...

Page 9

EXAMPLE: T HIS IS AN IRFU120 WIT EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" OR INT ERNAT ...

Page 10

IRLR/U3103PbF 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords