STF20NF06L STMicroelectronics, STF20NF06L Datasheet - Page 4

• Manufacturer Part Number: STF20NF06L
• Description: MOSFET N-CH 60V 20A TO-220FP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STF20NF06L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
I
C
I
C
GS(th)
DS(on)
C
Q
Q
DSS
GSS
fs
Q
oss
iss
rss
gs
gd
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
(see
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
= 250µA, V
= 15V
= Max rating
= Max rating,@125°C
= ± 18V
= V
= 10V, I
= 5V, I
= 25V, f = 1MHz,
= 0
= 30V, I
= 10V
Test conditions
Figure
Test conditions
GS
,
STB20NF06L - STF20NF06L - STP20NF06L
, I
D
I
D
16)
D
D
D
= 10A
= 8A
GS
= 10A
= 20A,
= 250µA
=0
Min.
Min.
60
2
0.060
0.075
Typ.
Typ.
400
100
7.5
2.5
4.2
10
40
3
0.070
0.085
Max.
Max.
±100
10
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
S
V
V
Ω
Ω