IRFR2405TRPBF International Rectifier, IRFR2405TRPBF Datasheet

MOSFET N-CH 55V 56A DPAK

IRFR2405TRPBF

Manufacturer Part Number
IRFR2405TRPBF
Description
MOSFET N-CH 55V 56A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRFR2405TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 34A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
56A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2430pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
56A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.016Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
56A
Power Dissipation
110W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFR2405PBFTR
IRFR2405TRPBF
IRFR2405TRPBFTR

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR2405TRPBF
Manufacturer:
MAXIM
Quantity:
180
Part Number:
IRFR2405TRPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
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Manufacturer:
IR
Quantity:
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IR
Quantity:
15 876
Company:
Part Number:
IRFR2405TRPBF
Quantity:
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Description
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
l
Seventh Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area.
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
www.irf.com
D
D
AR
DM
STG
D
GS
AS
AR
J
θJC
θJA
θJA
@ T
@ T
When mounted on 1" square PCB (FR-4 or G-10 Material) .
Surface Mount (IRFR2405)
Straight Lead (IRFU2405)
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
For recommended footprint and soldering techniques refer to application note #AN-994
C
C
C
= 25°C
= 100°C
= 25°C
This benefit, combined with the fast
Continuous Drain Current, V
Pulsed Drain Current 
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Continuous Drain Current, V
Power Dissipation
®
Parameter
Parameter
Power MOSFETs from
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
IRFR2405
–––
–––
–––
D-Pak
HEXFET
-55 to + 175
D
S
Max.
56†
40†
0.71
220
110
± 20
130
5.0
34
11
®
IRFU2405
R
IRFR2405PbF
IRFU2405PbF
Power MOSFET
DS(on)
I-Pak
Max.
V
110
I
1.4
50
D
DSS
= 56A†
PD - 95369A
= 0.016Ω
= 55V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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IRFR2405TRPBF Summary of contents

Page 1

... Description ® Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° ...

Page 4

1MHz iss rss 3200 oss iss 2400 1600 800 C oss C rss ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 SINGLE ...

Page 6

D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Fig 14. For N-Channel HEXFET www.irf.com Peak Diode Recovery dv/dt Test Circuit + • • ...

Page 8

EXAMPLE: T HIS IS AN IRF R120 WIT EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-F ree" ...

Page 9

EXAMPLE: T HIS IS AN IRFU120 WIT H ASSEMBLY LOT CODE 5678 ASSE MBLE 19, 1999 ASSEMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-Free" OR INT ERNAT IONAL RECTIF ...

Page 10

NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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