MOSFET N-CH 600V 2A TO-220FP

STF2HNK60Z

Manufacturer Part NumberSTF2HNK60Z
DescriptionMOSFET N-CH 600V 2A TO-220FP
ManufacturerSTMicroelectronics
SeriesSuperMESH™
STF2HNK60Z datasheets
 


Specifications of STF2HNK60Z

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs4.8 Ohm @ 1A, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C2AVgs(th) (max) @ Id4.5V @ 50µA
Gate Charge (qg) @ Vgs15nC @ 10VInput Capacitance (ciss) @ Vds280pF @ 25V
Power - Max20WMounting TypeThrough Hole
Package / CaseTO-220FPConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)4.8 Ohm @ 10 V
Drain-source Breakdown Voltage600 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current2 APower Dissipation20000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CContinuous Drain Current Id1A
Drain Source Voltage Vds600VOn Resistance Rds(on)4.4ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ3.75V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
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N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAK
Table 1: General Features
TYPE
V
R
DSS
STF2NK60Z
600 V
STQ2NK60ZR-AP
600 V
STP2NK60Z
600 V
STD2NK60Z-1
600 V
TYPICAL R
(on) = 7.2
DS
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
LOW POWER BATTERY CHARGERS
SWITH MODE LOW POWER
SUPPLIES(SMPS)
LOW POWER, BALLAST, CFL (COMPACT
FLUORESCENT LAMPS)
Table 2: Order Codes
Part Number
STQ2NK60ZR-AP
STP2NK60Z
STD2NK60Z-1
STF2NK60Z
September 2005
STF2NK60Z - STQ2NK60ZR-AP
STP2NK60Z - STD2NK60Z-1
Zener-Protected SuperMESH™ MOSFET
Figure 1: Package
I
Pw
DS(on)
D
< 8
1.4 A
20
< 8
0.4 A
3 W
< 8
1.4 A
45 W
< 8
1.4 A
45 W
TO-92 (Ammopack)
Figure 2: Internal Schematic Diagram
Marking
Package
Q2NK60ZR
P2NK60Z
TO-220
D2NK60Z
F2NK60Z
TO-220FP
3
2
1
IPAK
Packaging
TO-92
AMMOPAK
IPAK
3
2
1
TO-220
3
2
1
TO-220FP
TUBE
TUBE
TUBE
Rev. 5
1/16

STF2HNK60Z Summary of contents

  • Page 1

    N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAK Table 1: General Features TYPE V R DSS STF2NK60Z 600 V STQ2NK60ZR-AP 600 V STP2NK60Z 600 V STD2NK60Z-1 600 V TYPICAL R (on) = 7.2 DS EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY ...

  • Page 2

    STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous) at ...

  • Page 3

    ELECTRICAL CHARACTERISTICS (T Table 7: On/Off Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Gate Threshold Voltage GS(th) R Static Drain-source On ...

  • Page 4

    STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 3: Safe Operating Area For TO-220 . Figure 4: Safe Operating Area For IPAK Figure 5: Safe Operating Area For TO-92 4/16 Figure 6: Thermal Impedance For TO-220 Figure 7: Thermal Impedance ...

  • Page 5

    Figure 9: Safe Operating Area For TO-220FP Figure 10: Output Characteristics Figure 11: Transconductance STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 12: Thermal Impedance For TO-220FP Figure 13: Transfer Characteristics Figure 14: Gate Charge vs Gate-source Voltage 5/16 ...

  • Page 6

    STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 15: Static Drain-source On Resistance Figure 16: Capacitance Variations Figure 17: Normalized Gate Thereshold Volt- age vs Temperature 6/16 Figure 18: Source-Drain Forward Characteris- tics Figure 19: Maximum Avalanche Energy vs Temperature ...

  • Page 7

    Figure 21: Normalized BV DSS STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 vs Temperature 7/16 ...

  • Page 8

    STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 22: Switching Times Test Circuit For Resistive Load Figure 23: Test Circuit For Inductive Load Switching and Diode Recovery Times 8/16 Figure 24: Gate Charge Test Circuit ...

  • Page 9

    In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in ...

  • Page 10

    STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 DIM. MIN. A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 øP 3.75 Q ...

  • Page 11

    STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 DIM. MIN. A1 4. 0.41 P0 12.5 P2 5.65 F1, F2 2.44 delta 17.5 W0 5 18 ...

  • Page 12

    STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 12/16 ...

  • Page 13

    STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 TO-92 MECHANICAL DATA mm. DIM. MIN. TYP A 4.32 b 0.36 D 4.45 E 3.30 e 2.41 e1 1.14 L 12.70 R 2.16 S1 0.92 W 0.41 V 5° inch MAX. MIN. TYP. ...

  • Page 14

    STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 2 ...

  • Page 15

    Table 10: Revision History Date Revision 07-Jul-2004 3 11/Nov/2004 4 05-Sep-2005 5 STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 The document change from “TARGET” to “COMPLETE” New stylesheet Added TO-220FP Inserted Ecopack indication Description of Changes 15/16 ...

  • Page 16

    ... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...