IRF7862PBF International Rectifier, IRF7862PBF Datasheet

MOSFET N-CH 30V 21A 8-SOIC

IRF7862PBF

Manufacturer Part Number
IRF7862PBF
Description
MOSFET N-CH 30V 21A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF7862PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.7 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
45nC @ 4.5V
Input Capacitance (ciss) @ Vds
4090pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Current, Drain
21 A
Gate Charge, Total
30 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
3.7 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
18 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
87 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
3.7mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5.4V
Transistor Case Style
SOIC
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
4.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
21 A
Mounting Style
SMD/SMT
Gate Charge Qg
30 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
l
l
Benefits
l
l
l
l
l
l
www.irf.com
Notes  through
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
and Current
@ T
@ T
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
20V V
100% tested for Rg
Lead-Free
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
Max. Gate Rating
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 9
at 4.5V V
Parameter
Parameter
GS
f
g
GS
GS
@ 10V
@ 10V
V
30V
DSS
G
S
S
S
1
2
3
4
Top View
3.3m @V
Typ.
–––
–––
R
DS(on)
-55 to + 150
HEXFET
8
6
5
7
IRF7862PbF
Max.
0.02
± 20
170
2.5
1.6
30
21
17
D
D
D
A
D
A
GS
max
Max.
= 10V 30nC
®
20
50
Power MOSFET
SO-8
Qg
Units
Units
W/°C
°C/W
06/04/09
°C
W
V
A
1

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IRF7862PBF Summary of contents

Page 1

... Junction-to-Ambient R θJA Notes  through are on page 9 … www.irf.com V R DSS 3.3m @V 30V Top View @ 10V GS @ 10V GS Typ. g ––– f ––– IRF7862PbF ® HEXFET Power MOSFET max Qg DS(on) = 10V 30nC SO-8 Max. Units 30 V ± 170 2.5 W 1.6 0.02 W/° ...

Page 2

... IRF7862PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

... Fig 2. Typical Output Characteristics 1 21A 10V 1.4 1 25°C 1.0 0.8 0 -60 -40 - 100 120 140 160 Fig 4. Normalized On-Resistance IRF7862PbF VGS TOP 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V 2. Drain-to-Source Voltage ( Junction Temperature (°C) vs. Temperature 100 ...

Page 4

... IRF7862PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 100 150°C 10 1.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 5 16A 4.0 3.0 2.0 1 ...

Page 5

... THERMAL RESPONSE ) Ri (°C/W) τi (sec 1.242 0.000172 τ A τ A 4.759 0.031397 τ τ τ τ τ τ 28.506 1.2211 15.507 44.5 0.001 0. Rectangular Pulse Duration (sec) IRF7862PbF 250µ 100 125 150 Temperature ( ° Notes: 1. Duty factor Peak thJA A 0 100 5 ...

Page 6

... IRF7862PbF 125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V DRIVER D.U 20V 0.01 Ω Fig 14. Unclamped Inductive Test Circuit and Waveform 6 1600 21A 1400 1200 1000 800 600 400 200 Starting Junction Temperature (°C) Fig 13. Maximum Avalanche Energy ...

Page 7

... DS V Re-Applied G + Voltage - Inductor Curent for Logic Level Devices ® HEXFET Power MOSFETs d(on) Fig 18b. Switching Time Waveforms IRF7862PbF P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode Forward Drop I Ripple ≤ for N-Channel ...

Page 8

... IRF7862PbF SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $à ...

Page 9

... FEED DIRECTION 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) = 25Ω 16A. AS Comment Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.06/2009 IRF7862PbF TAC Fax: (310) 252-7903 9 ...

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