IRFH5302DTRPBF International Rectifier, IRFH5302DTRPBF Datasheet - Page 2

MOSFET N-CH 30V 29A 8VQFN

IRFH5302DTRPBF

Manufacturer Part Number
IRFH5302DTRPBF
Description
MOSFET N-CH 30V 29A 8VQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5302DTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
3635pF @ 25V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
29 A
Power Dissipation
3.6 W
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5302DTRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFH5302DTRPBF
Quantity:
1 672
Static @ T
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
R
R
R
R
Thermal Resistance
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
SD
g
g
sw
oss
rr
Q
Q
Q
Q
θJC
θJC
θJA
θJA
GS(th)
DSS
2
gs1
gs2
gd
godr
DSS
(Bottom)
(Top)
(<10s)
/∆T
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Ù
gs2
Parameter
Parameter
+ Q
gd
)
Parameter
g
g
Time is dominated by parasitic Inductance
Min.
Min.
1.35
–––
–––
–––
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
Typ. Max. Units
-0.25
3635
Typ. Max. Units
1.80
11.9
–––
–––
–––
–––
–––
–––
680
260
–––
–––
–––
–––
2.0
3.1
-10
6.2
4.0
7.9
7.9
1.9
55
26
19
16
30
20
12
19
28
Typ.
2.35
-100
0.65
–––
–––
–––
500
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
400
2.5
3.7
5.0
1.0
39
29
42
Typ.
–––
–––
–––
–––
mV/°C
V/°C
mΩ
mA
µA
nA
nC
nC
nC
nC
ns
pF
ns
V
V
S
A
V
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
di/dt = 300A/µs
D
D
J
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
GS
DS
DD
G
GS
DS
= 50A
= 50A
=1.8Ω
= 25°C, I
= 25°C, I
= 25°C, I
= V
= 24V, V
= 24V, V
= 15V, I
= 15V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 10V, V
= 4.5V
= 15V, V
= 0V
GS
Max.
, I
Max.
130
1.2
D
50
15
35
22
D
S
S
F
D
D
Conditions
Conditions
= 500µA
D
GS
GS
GS
DS
GS
= 100µA
= 50A, V
= 5.0A, V
= 50A, V
= 50A
= 50A
= 50A
= 0V
= 0V, T
= 15V, I
= 0V
= 4.5V
D
e
www.irf.com
e
= 1.0mA
GS
DD
J
GS
D
G
= 125°C
= 15V
= 50A
= 0V
= 0V
Units
°C/W
Units
mJ
A
e
e
D
S

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