IRFH5302DTRPBF International Rectifier, IRFH5302DTRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5302DTRPBF
• Description: MOSFET N-CH 30V 29A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5302DTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3635pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
7
6
5
4
3
2
1
Fig 15a. Switching Time Test Circuit
0
R G
20V
V DS
V GS, Gate -to -Source Voltage (V)
t p
5
≤ 0.1
≤ 1
I AS
D.U.T
0.01 Ω
L
10
T J = 25°C
T J = 125°C
15V
DRIVER
15
I D = 50A
+
-
+
-
V DD
A
20
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
600
500
400
300
200
100
90%
V
10%
V
0
I
DS
AS
GS
25
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
t p
r
75
t
100
d(off)
V
(BR)DSS
TOP
BOTTOM 50A
t
f
125
I D
8.7A
16A
150
5