IRFH5302DTRPBF International Rectifier, IRFH5302DTRPBF Datasheet - Page 6

MOSFET N-CH 30V 29A 8VQFN

IRFH5302DTRPBF

Manufacturer Part Number
IRFH5302DTRPBF
Description
MOSFET N-CH 30V 29A 8VQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5302DTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
3635pF @ 25V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
29 A
Power Dissipation
3.6 W
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5302DTRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFH5302DTRPBF
Quantity:
1 672
0
6

+
-
Fig 17. Gate Charge Test Circuit
1K
ƒ
+
-
Fig 16.
SD
S
DUT
-
L
G
+
HEXFET
VCC
+
-
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
for N-Channel
Fig 18. Gate Charge Waveform
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
P.W.
Qgodr
V
V
I
SD
GS
DD
=10V
www.irf.com
Vgs
Id

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