IRF7705TRPBF International Rectifier, IRF7705TRPBF Datasheet - Page 2
IRF7705TRPBF
Manufacturer Part Number
IRF7705TRPBF
Description
MOSFET P-CH 30V 8A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7705TRPBF.pdf
(8 pages)
Specifications of IRF7705TRPBF
Package / Case
8-TSSOP
Mounting Type
Surface Mount
Power - Max
1.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
88nC @ 10V
Vgs(th) (max) @ Id
2.5V @ 250µA
Current - Continuous Drain (id) @ 25° C
8A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 8A, 10V
Transistor Polarity
P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2.5V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 8 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7705TRPBF
Manufacturer:
IR
Quantity:
20 000
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
IRF7705
Notes:
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
I
V
fs
(BR)DSS
GS(th)
GSS
SD
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
Pulse width
(BR)DSS
max. junction temperature.
2
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t<10 sec
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
––– 0.015 –––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2774 –––
–––
–––
-30
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
270
128
418
270
–––
9.0
36
34
58
10
18
35
-1.2
–––
-2.5
–––
100
–––
–––
405
190
–––
–––
-15
-25
-1.5
-30
54
50
18
30
88
27
53
V/°C
m
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
A
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -8.0A
= -1.0A
= 25°C, I
= 25°C, I
= 15
= 6.0
= 0V, I
= -10V, I
= -4.5V, I
= V
= -10V, I
= -24V, V
= -24V, V
= -20V
= 20V
= -15V
= -10V
= 0V
= -25V
= -15V, V
GS
Conditions
, I
D
S
F
D
Conditions
D
= -250µA
D
= -1.5A, V
= -1.5A
D
GS
GS
GS
= -250µA
= -8.0A
= -8.0A
= -6.0A
= 0V
= 0V, T
= -10V
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
D
S