IRF7705TRPBF International Rectifier, IRF7705TRPBF Datasheet - Page 2

MOSFET P-CH 30V 8A 8-TSSOP

IRF7705TRPBF

Manufacturer Part Number
IRF7705TRPBF
Description
MOSFET P-CH 30V 8A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7705TRPBF

Package / Case
8-TSSOP
Mounting Type
Surface Mount
Power - Max
1.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
88nC @ 10V
Vgs(th) (max) @ Id
2.5V @ 250µA
Current - Continuous Drain (id) @ 25° C
8A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 8A, 10V
Transistor Polarity
P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2.5V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 8 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7705TRPBF
Manufacturer:
IR
Quantity:
20 000
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

IRF7705
Notes:
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
I
V
fs
(BR)DSS
GS(th)
GSS
SD
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
Pulse width
(BR)DSS
max. junction temperature.
2
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
ƒ
When mounted on 1 inch square copper board, t<10 sec
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
––– 0.015 –––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2774 –––
–––
–––
-30
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
270
128
418
270
–––
9.0
36
34
58
10
18
35
-1.2
–––
-2.5
–––
100
–––
–––
405
190
–––
–––
-15
-25
-1.5
-30
54
50
18
30
88
27
53
V/°C
m
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
A
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -8.0A
= -1.0A
= 25°C, I
= 25°C, I
= 15
= 6.0 ‚
= 0V, I
= -10V, I
= -4.5V, I
= V
= -10V, I
= -24V, V
= -24V, V
= -20V
= 20V
= -15V
= -10V‚
= 0V
= -25V
= -15V, V
GS
Conditions
, I
D
S
F
D
Conditions
D
= -250µA
D
= -1.5A, V
= -1.5A
D
GS
GS
GS
= -250µA
= -8.0A ‚
= -8.0A
= -6.0A ‚
= 0V
= 0V, T
= -10V‚
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V ‚
D
S

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