IRFH5301TRPBF International Rectifier, IRFH5301TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFH5301TRPBF
• Description: MOSFET N-CH 30V 35A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5301TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.85 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 77nC @ 10V
• Input Capacitance (ciss) @ Vds: 5114pF @ 15V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 110 W
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
t
Static @ T
Avalanche Characteristics
Diode Characteristics
R
R
R
R
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
Thermal Resistance
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
g
g
sw
oss
rr
Q
Q
Q
Q
θJC
θJC
θJA
θJA
GS(th)
DSS
2
gs1
gs2
gd
godr
DSS
(<10s)
(Bottom)
(Top)
/∆T
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Ù
gs2
Parameter
Parameter
™
+ Q
gd
)
Parameter
g
g
Time is dominated by parasitic Inductance
Min.
Min.
1.35
–––
–––
–––
–––
–––
–––
–––
–––
218
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
Typ. Max. Units
5114
1017
Typ. Max. Units
0.02
1.55
1.80
–––
-6.9
–––
–––
–––
–––
–––
406
–––
–––
–––
2.4
9.8
1.5
77
37
12
10
17
22
21
78
22
23
24
53
5
Typ.
1.85
2.35
-100
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
400
2.9
5.0
2.3
1.0
56
36
80
Typ.
–––
–––
–––
–––
mV/°C
V/°C
mΩ
nC
µA
nA
nC
nC
pF
nC
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
See Fig.6,17 & 18
V
V
I
R
See Fig.15
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 300A/µs
D
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
GS
DS
DD
GS
DS
J
J
G
= 50A
= 15A
=1.0Ω
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 20V
= -20V
= 15V, I
= 10V, V
= 15V
= 4.5V
= 16V, V
= 15V, V
= 0V
= 15V
GS
Max.
, I
Max.
1.1
150
15
35
22
D
50
D
S
F
Conditions
Conditions
D
D
= 250µA
D
GS
GS
GS
DS
GS
= 100µA
= 50A, V
= 50A
= 50A, V
= 50A
= 50A
= 0V
= 0V, T
= 15V, I
= 0V
eÃ
= 4.5V
D
e
www.irf.com
e
= 1mA
GS
DD
J
D
G
= 125°C
= 15V
= 50A
= 0V
Units
°C/W
Units
mJ
A
e
D
S