IRF7707TRPBF

Manufacturer Part NumberIRF7707TRPBF
DescriptionMOSFET P-CH 20V 7A 8-TSSOP
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7707TRPBF datasheet
 


Specifications of IRF7707TRPBF

Package / Case8-TSSOPMounting TypeSurface Mount
Power - Max1.5WFet TypeMOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs47nC @ 4.5VVgs(th) (max) @ Id1.2V @ 250µA
Current - Continuous Drain (id) @ 25° C7ADrain To Source Voltage (vdss)20V
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs22 mOhm @ 7A, 4.5V
Transistor PolarityP-ChannelResistance Drain-source Rds (on)14.3 mOhms
Drain-source Breakdown Voltage- 20 VGate-source Breakdown Voltage12 V
Continuous Drain Current- 7 APower Dissipation1.5 W
Mounting StyleSMD/SMTGate Charge Qg31 nC
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (155Kb)Embed
Next
Ultra Low On-Resistance
l
l
P-Channel MOSFET
Very Small SOIC Package
l
Low Profile (< 1.2mm)
l
l
Available in Tape & Reel
Description
®
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
provides thedesigner
national Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
T
, T
Junction and Storage Temperature Range
J
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
www.irf.com
HEXFET
V
DSS
-20V
1
D
2
3
G
S
4
1 = D
2 = S
3 = S
4 = G
@ -4.5V
GS
@ -4.5V
GS

ƒ
ƒ
ƒ
PD -93996
IRF7707
®
Power MOSFET
R
max
I
DS(on)
D
22m @V
= -4.5V
7.0A
-
GS
33m @V
= -2.5V
6.0A
-
GS
8
7
6
5
8 = D
7 = S
6 = S
TSSOP-8
5 = D
Max.
Units
-20
V
-7.0
-5.7
A
-28
1.5
W
1.0
W
0.01
W/°C
±12
V
-55 to +150
°C
Max.
Units
83
°C/W
1
10/04/00

IRF7707TRPBF Summary of contents

  • Page 1

    ... Available in Tape & Reel Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...

  • Page 2

    IRF7707 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ° 20µs ...

  • Page 4

    IRF7707 3500 1MHz iss rss 2800 oss iss 2100 1400 C oss 700 C ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

  • Page 6

    IRF7707 0.120 0.080 0.040 -7.0A 0.000 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. ...

  • Page 7

    TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF TSSOP-8 Tape and Reel 8 mm www.irf.com DAT E CODE (YW) T ...

  • Page 8

    IRF7707 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR JAPAN: K&H Bldg., ...