IRF7707TRPBF International Rectifier, IRF7707TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7707TRPBF
• Description: MOSFET P-CH 20V 7A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7707TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 47nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 7A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14.3 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7707
4
3500
2800
2100
1400
100
0.1
700
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0
0.2
1
Drain-to-Source Voltage
T = 150 C
0.4
J
-V
C
C
C
-V
SD
iss
oss
rss
DS
Forward Voltage
,Source-to-Drain Voltage (V)
V
C
C
C
0.6
, Drain-to-Source Voltage (V)
°
GS
iss
rss
oss
=
=
=
=
0.8
0V,
C
C
C
gs
gd
ds
T = 25 C
J
+ C
+ C
10
1.0
f = 1MHz
gd ,
gd
°
C
1.2
ds
V
GS
SHORTED
1.4
= 0 V
1.6
100
100
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
-7.0A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
10
DS
Q , Total Gate Charge (nC)
G
°
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
V
DS
=-16V
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40
10
100us
1ms
10ms
50
100
60