IRF7707TRPBF International Rectifier, IRF7707TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7707TRPBF
• Description: MOSFET P-CH 20V 7A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7707TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 47nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 7A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 14.3 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7707
6
10 V
0.120
0.080
0.040
0.000
Fig 12. Typical On-Resistance Vs.
Fig 14a. Basic Gate Charge Waveform
V
2.0
G
Q
GS
3.0
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
4.0
Charge
Q
Q
GD
G
I D = -7.0A
5.0
6.0
7.0
8.0
0.200
0.150
0.100
0.050
0.000
Fig 13. Typical On-Resistance Vs.
Fig 14b. Gate Charge Test Circuit
0
12V
V
GS
VGS = -2.5V
Same Type as D.U.T.
Current Regulator
10
.2 F
Drain Current
-I D , Drain Current ( A )
50K
-3mA
Current Sampling Resistors
20
.3 F
I
G
30
D.U.T.
www.irf.com
VGS = -4.5V
I
D
40
+
-
V
DS
50