STD2NK70ZT4 STMicroelectronics, STD2NK70ZT4 Datasheet

MOSFET N-CH 700V 1.6A DPAK

STD2NK70ZT4

Manufacturer Part Number
STD2NK70ZT4
Description
MOSFET N-CH 700V 1.6A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STD2NK70ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 800mA, 10V
Drain To Source Voltage (vdss)
700V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
11.4nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-4331-2

Available stocks

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Manufacturer
Quantity
Price
Part Number:
STD2NK70ZT4
Manufacturer:
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Quantity:
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Part Number:
STD2NK70ZT4
Manufacturer:
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Order codes
General features
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
July 2006
STD2NK70Z-1
STD2NK70Z
Extremely high dv/dt capability
ESD improved capability
100% avalanche tested
New high voltage benchmark
Gate charge minimized
Switching application
Type
STD2NK70Z-1
Part number
STD2NK70Z
V
700V
700V
DSS
R
DS(on)
7Ω
7Ω
Zener protected SuperMESH™ Power MOSFET
1.6A
1.6A
I
D
D2NK70Z
D2NK70Z
Marking
N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK
45W
45W
Pw
Rev 3
Internal schematic diagram
Package
D²PAK
IPAK
DPAK
1
3
STD2NK70Z-1
STD2NK70Z
IPAK
Tape & reel
Packaging
Tube
1
2
www.st.com
3
1/16
16

Related parts for STD2NK70ZT4

STD2NK70ZT4 Summary of contents

Page 1

Zener protected SuperMESH™ Power MOSFET General features Type V R DSS DS(on) STD2NK70Z 700V 7Ω STD2NK70Z-1 700V 7Ω ■ Extremely high dv/dt capability ■ ESD improved capability ■ 100% avalanche tested ■ New high voltage benchmark ■ Gate charge minimized ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD2NK70Z - STD2NK70Z-1 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous ...

Page 4

Electrical ratings Table 4. Gate-source zener diode Symbol Gate-source BV GSO breakdown voltage 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to ...

Page 5

STD2NK70Z - STD2NK70Z-1 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 6

Electrical characteristics Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM t ...

Page 7

STD2NK70Z - STD2NK70Z-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance Electrical characteristics Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance 7/16 ...

Page 8

Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics 8/16 STD2NK70Z - STD2NK70Z-1 Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. ...

Page 9

STD2NK70Z - STD2NK70Z-1 Figure 13. Maximum avalanche energy vs temperature Electrical characteristics 9/16 ...

Page 10

Test circuit 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 10/16 STD2NK70Z - STD2NK70Z-1 Figure 15. Gate charge test ...

Page 11

STD2NK70Z - STD2NK70Z-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...

Page 12

Package mechanical data DIM 12/16 TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 5.4 ...

Page 13

STD2NK70Z - STD2NK70Z-1 DIM (L1 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 5.2 ...

Page 14

Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 ...

Page 15

STD2NK70Z - STD2NK70Z-1 6 Revision history Table 8. Revision history Date 21-Jan-2005 10-Jun-2005 13-Jul-2006 Revision 1 First Release 2 Updated Figure 1: Safe operating area 3 New template, no content change Revision history Changes 15/16 ...

Page 16

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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