SI4420DYPBF International Rectifier, SI4420DYPBF Datasheet

MOSFET N-CH 30V 12.5A 8-SOIC

SI4420DYPBF

Manufacturer Part Number
SI4420DYPBF
Description
MOSFET N-CH 30V 12.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.SI4420DYTRPBF.pdf (8 pages)

Specifications of SI4420DYPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
2240pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
SI4420DYPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
Description
Thermal Resistance
This N-channel HEXFET
using International Rectifier's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
www.irf.com
V
I
I
I
P
P
E
V
T
R
D
D
DM
J,
DS
D
D
AS
GS
θJA
@ T
@ T
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
Lead-Free
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
®
power MOSFET is produced
Parameter
Parameter
ƒ
ƒ
GS
GS
ƒ
@ 10V
@ 10V
G
S
S
S
1
2
3
4
Top View
Si4420DYPbF
HEXFET
8
7
6
5
-55 to + 150
Max.
Max.
±12.5
0.02
±10
±50
400
± 20
50
D
D
D
D
2.5
1.6
A
30
A
SO-8
®
R
Power MOSFET
DS(on)
V
DSS
= 0.009Ω
PD - 95729
= 30V
Units
Units
W/°C
°C/W
mJ
°C
V
A
V
1
8/11/04

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SI4420DYPBF Summary of contents

Page 1

... Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com Top View @ 10V GS @ 10V GS ƒ ƒ ƒ 95729 Si4420DYPbF ® HEXFET Power MOSFET 30V DSS 0.009Ω DS(on) SO-8 Max. Units 30 V ±12.5 ±10 A ±50 2.5 1 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...

Page 4

1MHz iss rss oss ds gd 3000 C iss 2000 C oss 1000 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE ...

Page 6

V = 10V 4.5V GS 0.04 0. Drain Current (A) D Fig 12. Typical On-Resistance Vs. Drain Current 3.0 2.5 2.0 1.5 1.0 -60 - ...

Page 7

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 8

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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