IXFP3N50PM IXYS, IXFP3N50PM Datasheet
IXFP3N50PM
Manufacturer Part Number
IXFP3N50PM
Description
MOSFET N-CH 500V 2.7A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFP3N50PM.pdf
(2 pages)
Specifications of IXFP3N50PM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
9.3nC @ 10V
Input Capacitance (ciss) @ Vds
409pF @ 25V
Power - Max
36W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.7 A
Power Dissipation
36 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
2.7
Rds(on), Max, Tj=25°c, (?)
2
Ciss, Typ, (pf)
409
Qg, Typ, (nc)
9.3
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
36
Rthjc, Max, (ºc/w)
3.5
Package Style
TO-220 Overmolded
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFP3N50PM
Manufacturer:
IXYS
Quantity:
18 000
PolarHV
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Note 1
Continuous
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 250 µA
= 250 µA
, V
G
= 1.8 A
= 50 Ω
DS
= 0
GS
= 1 MΩ
Preliminary Technical Information
DD
T
J
≤ V
= 125° C
DSS
JM
IXFP 3N50PM
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 30
± 40
500
500
100
150
300
260
2.7
10
10
36
8
3
4
±100
200
Max.
5.5
2.0
5
V/ns
mJ
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
OVERMOLDED TO-220
(IXTP...M) OUTLINE
Features
l
l
l
l
l
Advantages
l
l
l
Plastic overmolded tab for electrical
isolation
Fast intrinsic diode
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
V
I
R
t
D25
rr
G = Gate
S = Source
DSS
DS(on)
D
S
= 500 V
= 2.7 A
≤ ≤ ≤ ≤ ≤ 2.0 Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200 ns
D = Drain
DS99509E(04/06)
Isolated Tab
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IXFP3N50PM Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS 1.8 A DS(on Note 1 © 2006 IXYS All rights reserved Preliminary Technical Information IXFP 3N50PM Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 100 ≤ DSS 36 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 4 Characteristic Values Min ...
Page 2
... IXYS reserves the right to change limits, test conditions, and dimen- sions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. ...