IRFH5300TRPBF International Rectifier, IRFH5300TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5300TRPBF
• Description: MOSFET N-CH 30V 40A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5300TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 7200pF @ 15V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
350
300
250
200
150
100
1000
50
100
0.1
0
10
1
25
0.2
Fig 9. Maximum Drain Current Vs.
0.001
0.01
0.1
1
1E-006
Case (Bottom) Temperature
T J = 150°C
50
0.4
V SD , Source-to-Drain Voltage (V)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
T C , Case Temperature (°C)
D = 0.50
0.6
0.20
0.10
0.05
0.02
0.01
75
LIMITED BY PACKAGE
T J = 25°C
0.8
100
SINGLE PULSE
( THERMAL RESPONSE )
1.0
1E-005
125
1.2
V GS = 0V
150
1.4
175
t 1 , Rectangular Pulse Duration (sec)
1.6
0.0001
0.001
Fig 10. Threshold Voltage Vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
1000
100
0.1
10
-75 -50 -25
1
Fig 8. Maximum Safe Operating Area
0.1
OPERATION IN THIS AREA LIMITED BY R DS (on)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Tc = 25°C
Tj = 150°C
Single Pulse
V DS , Drain-to-Source Voltage (V)
T J , Temperature ( °C )
0.01
0
1
25
50
10msec
75
10
I D = 1.0A
I D = 1.0mA
I D = 500μA
I D = 150μA
1msec
100 125 150 175
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0.1
100μsec
100