IRF7805PBF International Rectifier, IRF7805PBF Datasheet
IRF7805PBF
Specifications of IRF7805PBF
Available stocks
Related parts for IRF7805PBF
IRF7805PBF Summary of contents
Page 1
... The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation microprocessors. The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters. Absolute Maximum Ratings Parameter V Drain-to-Source Voltage DS V ...
Page 2
... IRF7805PbF Static @ T = 25°C (unless otherwise specified) J Parameter Drain-to-Source Breakdown Voltage BV DSS Static Drain-to-Source On-Resistance R DS(on) Gate Threshold Voltage V GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Total Gate Charge Pre-Vth Gate-to-Source Charge gs1 Q Post-Vth Gate-to-Source Charge ...
Page 3
... Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Typical Characteristics Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage 150 0.1 0.4 0 Fig 4. Typical Source-Drain Diode Forward Voltage Notes: 1. Duty factor Peak 0 Rectangular Pulse Duration (sec) 1 IRF7805PbF ° ° 0.6 0.7 0.8 0.9 ,Source-to-Drain Voltage ( ...
Page 4
... IRF7805PbF SO-8 Package Details & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT à ...
Page 5
... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) 330.00 (12.992) MAX. Visit us at www.irf.com for sales contact information.01/2008 IRF7805PbF 12.3 ( .484 ) 11.7 ( .461 ) FEED DIRECTION 14.40 ( .566 ) 12.40 ( .488 ) TAC Fax: (310) 252-7903 5 ...