IRF7458PBF International Rectifier, IRF7458PBF Datasheet

MOSFET N-CH 30V 14A 8-SOIC

IRF7458PBF

Manufacturer Part Number
IRF7458PBF
Description
MOSFET N-CH 30V 14A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7458PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 14A, 16V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
2410pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Current, Drain
14 A
Gate Charge, Total
39 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
6.3 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
22 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
26 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
0.82 V
Voltage, Gate To Source
±30 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.008Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±30V
Continuous Drain Current
14A
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings
l
l
l
Benefits
l
l
l
Thermal Resistance
www.irf.com
Applications
Notes  through „ are on page 8
Symbol
V
V
I
I
I
P
P
T
Symbol
R
R
D
D
DM
DS
GS
D
D
J
θJL
θJA
@ T
@ T
and Current
, T
for Telecom and Industrial Use
Converters with Synchronous Rectification
High Frequency Isolated DC-DC
High Frequency Buck Converters for
Lead-Free
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
@T
@T
Computer Processor Power
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient „
Linear Derating Factor
Gate-to-Source Voltage
Parameter
Parameter

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
G
S
S
S
V
30V
1
2
3
4
DSS
Top View
Typ.
–––
–––
HEXFET
8
7
6
5
-55 to + 150
R
D
D
D
D
Max.
DS(on)
A
A
± 30
0.02
110
2.5
1.6
30
14
11
8.0mΩ
®
IRF7458PbF
Power MOSFET
Max.
max
20
50
SO-8
mW/°C
Units
Units
°C/W
14A
°C
W
W
I
V
A
V
D
1

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IRF7458PBF Summary of contents

Page 1

... Notes  through „ are on page 8 www.irf.com SMPS MOSFET HEXFET V DSS 30V Top View @ 10V GS @ 10V GS  ƒ ƒ Typ. ––– ––– IRF7458PbF ® Power MOSFET R max I DS(on) D 8.0mΩ 14A SO-8 Max. Units 30 V ± ...

Page 2

... IRF7458PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP BOTTOM 100 10 ° 1 0.1 100 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = 15V 0.0 6.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7458PbF VGS 16V 12V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 14A ...

Page 4

... IRF7458PbF 100000 0V, C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 150 ° 0.1 0.2 0.6 1.0 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage MHZ SHORTED 16 12 ...

Page 5

... Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 100 125 150 ° 10 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7458PbF + - ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ...

Page 6

... IRF7458PbF 0.020 0.016 6.0V 0.012 0.008 16V 0.004 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V Fig 14a&b. Unclamped Inductive Test circuit ...

Page 7

... L 7 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL LAS T DIGIT YEAR XXXX WW = WEEK EMBLY CODE F7101 LOT CODE PART NUMBER IRF7458PbF INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 ...

Page 8

... IRF7458PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...

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