IRF530NSPBF International Rectifier, IRF530NSPBF Datasheet

IRF530NSPBF

Manufacturer Part Number

IRF530NSPBF

Description

MOSFET N-CH 100V 17A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRF530NSTRLPBF.pdf (11 pages)

2.IRF530NSPBF.pdf (4 pages)

Specifications of IRF530NSPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

90 mOhm @ 9A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

17A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

37nC @ 10V

Input Capacitance (ciss) @ Vds

920pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Current, Drain

17 A

Gate Charge, Total

37 nC

Package Type

D2Pak

Polarization

N-Channel

Power Dissipation

70 W

Resistance, Drain To Source On

90 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

35 ns

Time, Turn-on Delay

9.2 ns

Transconductance, Forward

12 S

Voltage, Breakdown, Drain To Source

100 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

90 m Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

17 A

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

25 ns

Gate Charge Qg

24.7 nC

Minimum Operating Temperature

- 55 C

Rise Time

22 ns

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.09Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRF530NSPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF530NSPBF

Manufacturer:

FREESCLE

Quantity:

41 590

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF530NSPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF530NSPBF

Quantity:

10 000

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Absolute Maximum Ratings

Thermal Resistance

Advanced HEXFET

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D

die sizes up to HEX-4. It provides the highest power capability and the

lowest possible on-resistance in any existing surface mount package. The

connection resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF530NL) is available for low-profile applications.

Description

www.irf.com

dv/dt

STG

θJC

θJA

Pak is suitable for high current applications because of its low internal

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of accommodating

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB Mounted,steady-state)**

Power MOSFETs from International Rectifier

Parameter

‡

ƒ‡

@ 10V

‡

Typ.

300 (1.6mm from case )

–––

HEXFET

IRF530NSPbF

-55 to + 175

Max.

0.47

± 20

3.8

9.0

7.0

7.4

IRF530NSPbF

IRF530NLPbF

Pak

Power MOSFET

DS(on)

Max.

2.15

DSS

IRF530NLPbF

= 17A

= 100V

TO-262

PD - 95100

= 90mΩ

Units

°C/W

W/°C

V/ns

°C

Related parts for IRF530NSPBF

IRF530NSPBF Summary of contents

Page 1

... Typ 95100 IRF530NSPbF IRF530NLPbF ® HEXFET Power MOSFET 100V DSS R = 90mΩ DS(on 17A Pak TO-262 IRF530NSPbF IRF530NLPbF Max. Units 3 0.47 W/°C ± 9.0 A 7.0 mJ 7.4 V/ns - 175 °C Max. Units ––– ...

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

1MHz iss rss oss ds gd 1200 C iss 800 C oss 400 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 SINGLE PULSE 0.02 0.1 (THERMAL RESPONSE) ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 200 160 DRIVER 120 + ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Dimensions are shown in millimeters (inches ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead-Free" ...

Page 10

D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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