IRL3103STRRPBF International Rectifier, IRL3103STRRPBF Datasheet

MOSFET N-CH 30V 64A D2PAK

IRL3103STRRPBF

Manufacturer Part Number
IRL3103STRRPBF
Description
MOSFET N-CH 30V 64A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL3103STRRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 34A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
64A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 4.5V
Input Capacitance (ciss) @ Vds
1650pF @ 25V
Power - Max
94W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
64A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal Resistance
l
l
l
l
l
l
l
Description
Absolute Maximum Ratings
Advanced HEXFET
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for low-
profile applications.
www.irf.com
R
R
I
I
I
P
V
I
E
dv/dt
T
T
D
D
DM
AR
2
J
STG
D
GS
AR
θJC
θJA
Pak is suitable for high current applications because of its
@ T
@ T
Advanced Process Technology
Surface Mount (IRL3103S)
Low-profile through-hole (IRL3103L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
2
C
C
C
Pak is a surface mount power package capable of
= 25°C
= 100°C
= 25°C
®
Peak Diode Recovery dv/dt
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Power MOSFETs from International
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
IRL3103S
D
S
D
Max.
0.63
220
± 16
5.0
2
64
45
94
34
22
Pak
IRL3103SPbF
IRL3103LPbF
®
R
Power MOSFET
Max.
DS(on)
V
1.6
40
DSS
I
D
IRL3103L
= 64A
TO-262
PD - 95150
= 12mΩ
= 30V
Units
Units
°C/W
W/°C
V/ns
mJ
°C
W
A
V
A
04/19/04
1

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IRL3103STRRPBF Summary of contents

Page 1

Advanced Process Technology l Surface Mount (IRL3103S) l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ...

Page 2

IRL3103S/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 10 2.7V  20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...

Page 4

IRL3103S/LPbF  3000 1MHz iss rss gd 2500 oss 2000 C iss 1500  C ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1  SINGLE PULSE ...

Page 6

IRL3103S/LPbF Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

D.U.T + ‚ -  Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V Fig 14. For N-channel www.irf.com Peak Diode Recovery ...

Page 8

IRL3103S/LPbF 2 D Pak Package Outline 2 D Pak Part Marking Information (Lead-Free 30S WIT COD ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information E XAMP 3103L L OT CODE 1789 19, 1997 ...

Page 10

IRL3103S/LPbF 2 D Pak Tape & Reel Information Dimensions are shown in millimeters (inches TIO (. (. ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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