IRLR3636PBF International Rectifier, IRLR3636PBF Datasheet
IRLR3636PBF
Specifications of IRLR3636PBF
Related parts for IRLR3636PBF
IRLR3636PBF Summary of contents
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... Parameter k j IRLR3636PbF IRLU3636PbF HEXFET Power MOSFET V D DSS R typ. DS(on) max (Silicon Limited (Package Limited) S D-Pak I-Pak IRLR3636PbF IRLU3636PbF G D Drain Max 396 143 0.95 ± 175 300 (1.6mm from case) 170 See Fig.14, 15, 22a, 22b Typ. Max. ––– ...
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IRLR/U3636PbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...
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PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° ...
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IRLR/U3636PbF 1000 175°C 100 25° 0.1 0.1 0.4 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 110 100 Limited By Package ...
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D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, ...
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IRLR/U3636PbF 3.0 2.5 2.0 1 100µ 250µA 1 1.0mA ID = 1.0A 0.5 0.0 -75 -50 - 100 125 150 175 Temperature ( °C ) ...
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D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...
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IRLR/U3636PbF 5 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 ,5)5 $ ,5)5 www.irf.com ...
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IRLR/U3636PbF 9 ...
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IRLR/U3636PbF TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE ...