IRF6720S2TRPBF International Rectifier, IRF6720S2TRPBF Datasheet

MOSFET N-CH 30V 11A DIRECTFET-S1

IRF6720S2TRPBF

Manufacturer Part Number
IRF6720S2TRPBF
Description
MOSFET N-CH 30V 11A DIRECTFET-S1
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6720S2TR1PBF.pdf (10 pages)

Specifications of IRF6720S2TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
1140pF @ 15V
Power - Max
1.7W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric S1
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
35 A
Power Dissipation
17 W
Gate Charge Qg
7.9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF6720S2TRPBF
Manufacturer:
IR
Quantity:
1 815
l
l
l
l
l
l
l
l
l
Applicable DirectFET Outline and Substrate Outline
Description
The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6720S2PbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6720S2PbF has been optimized for the control FET socket of synchronous buck oper-
ating from 12 volt bus converters.

‚
ƒ
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
www.irf.com
D
D
D
DM
AR
DS
GS
AS
RoHS Compliant and Halogen Free 
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Ideal for CPU Core DC-DC Converters
Optimized for Control FET Application 
Compatible with existing Surface Mount Techniques 
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
S1
20
16
12
8
4
A
A
C
= 25°C
= 70°C
= 25°C
0
Fig 1. Typical On-Resistance vs. Gate Voltage
T J = 25°C
S2
V GS, Gate -to -Source Voltage (V)
5
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
SB
10
T J = 125°C
Ãg
15
g
I D = 11A
Parameter
GS
GS
GS
M2
@ 10V
@ 10V
@ 10V
h
20

f
M4
„
…
†
30V max ±20V max 6.0mΩ@ 10V 9.8mΩ@ 4.5V
Q
7.9nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
g tot
C
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
DSS
12.0
10.0
measured with thermocouple mounted to top (Drain) of part.
8.0
6.0
4.0
2.0
0.0
0
J
2.8nC
I D = 8.8A
= 25°C, L = 2.0mH, R
Q
2
gd
V
IRF6720S2TR1PbF
GS
DirectFET™ Power MOSFET ‚
4
IRF6720S2TRPbF
L4
Q G Total Gate Charge (nC)
0.9nC
Q
6
gs2
V DS = 24V
V DS = 15V
Max.
8
±20
9.2
8.8
30
11
35
92
77
R
L6
G
10
DS(on)
14nC
= 25Ω, I
Q
rr
12
DirectFET™ ISOMETRIC
TM
AS
14
packaging to achieve
5.1nC
= 8.8A.
L8
Q
oss
16
R
DS(on)
18
Units
V
04/30/09
mJ
2.0V
V
A
A
gs(th)
20
1

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IRF6720S2TRPBF Summary of contents

Page 1

... Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 2.0mH IRF6720S2TRPbF IRF6720S2TR1PbF DirectFET™ Power MOSFET ‚ DS(on) DS(on gs2 rr oss ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH 0 25°C 2.5V 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 15V ≤ 60µs PULSE WIDTH 175°C ...

Page 5

175° 25° -40°C 0 0.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Duty Cycle = Single Pulse 10 0.01 1 0.05 0.10 0.1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ 25°C and Tstart = 150°C. 0.01 1.0E-06 1.0E-05 Fig 16. Typical Avalanche Current vs.Pulsewidth 80 TOP Single ...

Page 7

DUT 0 1K 20K S Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. Switching Time Test ...

Page 8

D.U.T + ƒ • • - • + ‚ „  • G • • SD • Fig 19. ™ 8 Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current + D.U.T. ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking www.irf.com DIMENSIONS METRIC IMPERIAL CODE MIN MAX MIN 4.85 A 4.75 0.187 3.95 0.146 B 3.70 2.85 C 0.108 2.75 0.45 0.014 D ...

Page 10

... DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 10 NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6720S2TRPBF). For 1000 parts on 7" reel, order IRF6720S2TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) ...

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