STF16NF25 STMicroelectronics, STF16NF25 Datasheet - Page 3

• Manufacturer Part Number: STF16NF25
• Description: MOSFET N-CH 250V 13A TO-220FP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STF16NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.5A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 195mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD16NF25 - STF16NF25 - STP16NF25
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area.
3. I
Table 3.
Table 4.
Symbol
Rthj-case
Rthj-amb
Rthj-pcb
Symbol
Symbol
dv/dt
SD
E
I
I
AR
V
DM
V
V
T
AS
P
T
I
I
T
ISO
GS
DS
stg
D
D
J
tot
≤
j
(2)
13A, di/dt
(3)
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id= 13A, Vdd=50V)
Avalanche characteristics
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction to pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;T
Storage temperature
Max. operating junction temperature
≤
300A/µs, V
C
=25°C)
DD
Parameter
Parameter
≤
Parameter
80% V
C
= 25°C
GS
(BR)DSS
= 0)
C
C
, Tj
= 25°C
= 100°C
≤
T
JMAX
TO-220
62.5
TO-220
--
DPAK
8.19
0.72
13
52
90
--
1.39
-55 to 150
DPAK
Value
100
Value
± 20
50
250
300
15
TO-220FP
Value
8.19
TO-220FP
2500
100
13
52
13
0.2
25
(1)
(1)
Electrical ratings
62.5
(1)
--
5
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
Unit
°C
W
V
V
A
A
A
V
°C
Unit
mJ
A
3/16