IRLU120NPBF International Rectifier, IRLU120NPBF Datasheet

MOSFET N-CH 100V 10A I-PAK

IRLU120NPBF

Manufacturer Part Number
IRLU120NPBF
Description
MOSFET N-CH 100V 10A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRLR120NTRPBF.pdf (11 pages)
2.IRLU120NPBF.pdf (3 pages)

Specifications of IRLU120NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
185 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Input Capacitance (ciss) @ Vds
440pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Current, Drain
10 A
Gate Charge, Total
20 nC
Package Type
I-Pak (TO-251AA)
Polarization
N-Channel
Power Dissipation
48 W
Resistance, Drain To Source On
0.185 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
23 ns
Time, Turn-on Delay
4 ns
Transconductance, Forward
3.1 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±16 V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
265 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
11 A
Mounting Style
SMD/SMT
Gate Charge Qg
13.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLU120NPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRLU120NPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRLU120NPBF
Quantity:
25 780
l
l
l
l
l
l
Description
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θJA
θJA
@ T
@ T
Surface Mount (IRLR120N)
Straight Lead (IRLU120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
IRLR/U120NPbF
Typ.
300 (1.6mm from case )
–––
–––
–––
TO-252AA
HEXFET
D-PAK
-55 to + 175
S
D
Max.
0.32
± 16
7.0
6.0
4.8
5.0
10
35
48
85
TO-251AA
®
R
I-PAK
DS(on)
Power MOSFET
V
Max.
110
DSS
3.1
50
PD - 95082A
I
D
= 10A
= 0.185Ω
= 100V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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IRLU120NPBF Summary of contents

Page 1

... Fully Avalanche Rated l Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...

Page 2

IRLR/U120NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2. 0.1 0 Fig 1. Typical Output Characteristics 100 and V , Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer ...

Page 4

IRLR/U120NPbF 800 1MHz iss rss oss 600 iss 400 C oss 200 C rss 0 ...

Page 5

T , Case Temperature (°C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.1 0.01 ...

Page 6

IRLR/U120NPbF D.U 10V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS www.irf.com Peak Diode Recovery dv/dt ...

Page 8

IRLR/U120NPbF EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" Note: "P" sembly line pos ition indicates "Lead-Free" ...

Page 9

EXAMPLE: T HIS IS AN IRFU120 WIT EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" OR INT ERNAT ...

Page 10

IRLR/U120NPbF TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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