IXTP1N100P IXYS, IXTP1N100P Datasheet

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IXTP1N100P

Manufacturer Part Number
IXTP1N100P
Description
MOSFET N-CH 1000V 1A TO-220
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXTP1N100P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
15.5nC @ 10V
Input Capacitance (ciss) @ Vds
331pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
13 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.2 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
1.0
Rds(on), Max, Tj=25°c, (?)
15
Ciss, Typ, (pf)
331
Qg, Typ, (nc)
15.5
Trr, Typ, (ns)
750
Pd, (w)
50
Rthjc, Max, (k/w)
2.5
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP1N100P
Manufacturer:
IXYS
Quantity:
18 000
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque
TO-263
TO-220
TO-252
V
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 250μA
≤ V
= 50μA
= 0.5 • I
DS
DSS
= 0V
, T
(TO-220)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTA1N100P
IXTP1N100P
IXTY1N100P
-55 ... +150
-55 ... +150
1000
Maximum Ratings
Characteristic Values
1.13 / 10
Min.
2.5
1000
1000
2.50
3.00
0.35
±20
±30
100
150
300
260
1.0
1.8
1.0
10
50
12.2
Typ.
Nm/lb.in.
±50 nA
100 μA
Max.
4.5
15
5 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
g
V
I
R
TO-263 (IXTA)
TO-220 (IXTP)
TO-252 (IXTY)
G = Gate
S = Source
Features
Advantages
Applications
D25
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G
G
S
= 1000V
= 1.0A
≤ ≤ ≤ ≤ ≤ 15Ω Ω Ω Ω Ω
S
S
D = Drain
TAB = Drain
(TAB)
(TAB)
DS99234G(4/08)
(TAB)

Related parts for IXTP1N100P

IXTP1N100P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXTA1N100P IXTP1N100P IXTY1N100P Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ±30 1.0 1.8 JM 1.0 100 ≤ 150° -55 ... +150 150 -55 ... +150 300 260 1. 2.50 3.00 0.35 Characteristic Values Min ...

Page 2

... Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 750 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA1N100P IXTP1N100P IXTY1N100P TO-220 (IXTP) Outline Max Pins Gate nC 2.5 °C/W °C/W Max. 1.0 A 3.0 A 1.5 V TO-252 (IXTY) Outline ...

Page 3

... Value D 1.1 1.0 0 125ºC J 0.8 0.7 0.6 0.5 0.4 0.3 0 25ºC J 0.1 0.0 1.0 1.2 1.4 1.6 1.8 IXTA1N100P IXTP1N100P Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 1.0A D -50 -25 ...

Page 4

... T = 25ºC J 0.7 0.75 0.8 0.85 0.9 10.0 C iss C oss C rss IXTA1N100P IXTP1N100P Fig. 8. Transconductance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ...

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