IRF6711STR1PBF International Rectifier, IRF6711STR1PBF Datasheet

IRF6711STR1PBF

Manufacturer Part Number

IRF6711STR1PBF

Description

MOSFET N-CH 25V 19A DIRECTFET-SQ

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6711STRPBF.pdf (9 pages)

Specifications of IRF6711STR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.8 mOhm @ 19A, 10V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

19A

Vgs(th) (max) @ Id

2.35V @ 25µA

Gate Charge (qg) @ Vgs

20nC @ 4.5V

Input Capacitance (ciss) @ Vds

1810pF @ 13V

Power - Max

2.2W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric SQ

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6.5 mOhms

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

84 A

Power Dissipation

42 W

Gate Charge Qg

13 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6711STR1PBFTR

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Description

The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-

niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6711STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in

switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6711STRPbF has been optimized for the control FET socket of synchronous buck

operating from 12 volt bus converters.

Absolute Maximum Ratings

www.irf.com

RoHS Compliant and Halogen Free

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ideal for CPU Core DC-DC Converters

100% Rg tested

@ T

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

Ultra Low Package Inductance

Optimized for High Frequency Switching

Optimized for Control FET Application

Compatible with existing Surface Mount Techniques

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

T J = 25°C

V GS, Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

Ãg

Parameter

I D = 15A

@ 10V

„

…

†

25V max ±20V max 3.0mΩ @ 10V 5.2mΩ @ 4.5V

13nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

DSS

measured with thermocouple mounted to top (Drain) of part.

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0.0

4.4nC

= 25°C, L = 0.54mH, R

I D = 15A

IRF6711STRPbF

DirectFET™ Power MOSFET ‚

1.8nC

Q G Total Gate Charge (nC)

IRF6711SPbF

gs2

Max.

150

±20

V DS = 20V

V DS = 13V

DS(on)

21nC

= 25Ω, I

DirectFET™ ISOMETRIC

packaging to achieve

9.5nC

= 15A.

oss

DS(on)

Units

11/11/09

1.8V

gs(th)

Related parts for IRF6711STR1PBF

IRF6711STR1PBF Summary of contents

Page 1

RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 100 10 1 2.5V 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 150°C T ...

Page 5

150° 25°C 100 -40° 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

DUT 0 1K Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time Test Circuit ...

Page 7

D.U.T + ƒ • • - • + ‚ „ • G • • SD • Fig 18. ™ www.irf.com Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Current + D.U.T. V Waveform DS ...

Page 8

Note: For the most current drawing please refer to IR website at 8 DIMENSIONS IMPERIAL METRIC CODE MAX MIN MIN 4.85 0.187 A 4.75 0.191 3.95 B 3.70 0.146 0.156 2.85 0.108 C 2.75 0.112 0.45 0.014 D ...

Page 9

... NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6711STRPBF). For 1000 parts on 7" reel, order IRF6711STR1PBF CODE NOTE: CONTROLLING DIMENSIONS IN MM Note: For the most current drawing please refer to IR website at IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www ...

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