IRFZ44ESPBF International Rectifier, IRFZ44ESPBF Datasheet

IRFZ44ESPBF

Manufacturer Part Number

IRFZ44ESPBF

Description

MOSFET N-CH 60V 48A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheet

1.IRFZ44ELPBF.pdf (11 pages)

Specifications of IRFZ44ESPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

23 mOhm @ 29A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

48A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

1360pF @ 25V

Power - Max

110W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.023Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±20V

Continuous Drain Current

48A

Power Dissipation

110W

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

D2PAK

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFZ44ESPBF

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Description

Absolute Maximum Ratings

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a wide variety of

applications.

The D

sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ44EL) is available for low-profile applications.

dv/dt

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Surface Mount (IRFZ44ES)

Low-profile through-hole (IRFZ44EL)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of accommodating die

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Parameter

…

@ 10V…

‚

…

IRFZ44ESPbF

300 (1.6mm from case )

Typ.

IRFZ44ELPbF

0.50

–––

HEXFET

Pak is

10 lbf•in (1.1N•m)

-55 to + 175

Max.

0.71

192

110

± 20

220

5.0

D Pak

Power MOSFET

DS(on)

Max.

–––

1.4

DSS

= 48A

= 0.023Ω

= 60V

PD - 95572

TO-262

Units

W/°C

°C/W

V/ns

°C

Related parts for IRFZ44ESPBF

IRFZ44ESPBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com IRFZ44ESPbF IRFZ44ELPbF G @ 10V… 10V… GS … ‚ … ƒ … 300 (1.6mm from case ) Typ. – ...

Page 2

IRFZ44ES/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DV /DT (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS 1000 100 ...

Page 4

IRFZ44ES/LPbF 2500 1MHz iss rss 2000 oss iss 1500 C oss 1000 C rss ...

Page 5

T , Case Temperature ( Case Temperature ( ...

Page 6

IRFZ44ES/LPbF D.U 20V 0.01 Ω Charge 6 500 15V 400 DRIVER 300 + - 200 100 ...

Page 7

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com IRFZ44ES/LPbF + • • ƒ • - „ • • • • P.W. ...

Page 8

IRFZ44ES/LPbF 2 Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT CODE 8024 AS S EMB LED ON WW 02, 2000 EMB LY LINE "L" Note: "P" in ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L L OT CODE 1789 AS S EMB LED ON WW 19, 1997 EMBLY LINE "C" Note: ...

Page 10

IRFZ44ES/LPbF 2 Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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