IRFZ48NSTRRPBF International Rectifier, IRFZ48NSTRRPBF Datasheet

IRFZ48NSTRRPBF

Manufacturer Part Number

IRFZ48NSTRRPBF

Description

MOSFET N-CH 55V 64A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFZ48NSTRLPBF.pdf (11 pages)

Specifications of IRFZ48NSTRRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

14 mOhm @ 32A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

64A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

81nC @ 10V

Input Capacitance (ciss) @ Vds

1970pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Absolute Maximum Ratings

l Advanced Process Technology

l Surface Mount (IRFZ48NS)

l Low-profile through-hole (IRFZ48NL)

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Advanced HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-resistance

in any existing surface mount package. The D

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0W

in a typical surface mount application.

The through-hole version (IRFZ48NL) is available for low-

profile applications.

www.irf.com

dv/dt

STG

qJA

qJC

@ T

Pak is a surface mount power package capable of

= 25°C

= 100°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Power MOSFETs from

Parameter

Pak is

@ 10V

300 (1.6mm from case )

–––

HEXFET

-55 to + 175

Max.

0.83

210

130

± 20

3.8

5.0

D Pak

Power MOSFET

DS(on)

1.15

DSS

= 64A

= 0.014Ω

= 55V

TO-262

Units

W/°C

V/ns

C/W

°C

Related parts for IRFZ48NSTRRPBF

IRFZ48NSTRRPBF Summary of contents

Page 1

... Lead-Free ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRFZ48NS/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

IRFZ48NS/LPbF 3500 1MHz iss 3000 rss oss ds gd 2500 C iss 2000 1500 1000 C oss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 ...

Page 6

IRFZ48NS/LPbF D.U 20V 0.01 Ω Charge 6 360 15V 300 DRIVER 240 + 180 ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com IRFZ48NS/LPbF + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward ...

Page 8

IRFZ48NS/LPbF 2 Dimensions are shown in millimeters (inches ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead-Free" ...

Page 10

IRFZ48NS/LPbF 2 D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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