IRL1104PBF International Rectifier, IRL1104PBF Datasheet - Page 2

• Manufacturer Part Number: IRL1104PBF
• Description: MOSFET N-CH 40V 104A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1104PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 62A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 104A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3445pF @ 25V
• Power - Max: 167W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL1104PBF

IRL1104PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
‚
ƒ

Notes:
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
I
I
d(on)
r
d(off)
f
S
on
DSS
GSS
SM
rr
fs
GS(th)
(BR)DSS
DS(on)
oss
SD
gd
iss
rss
2
g
gs
rr
V
I
Repetitive rating; pulse width limited by
R
T
(BR)DSS
max. junction temperature. ( See fig. 11 )
SD
DD
J
G
≤ 175°C
≤ 62A, di/dt ≤ 217A/µs, V
= 25Ω, I
= 15V, starting T
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resis-
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
Drain-to-Source Leakage Current
=62A. (See Figure 12)
J
= 25°C, L = 0.18mH
Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
1.0
Min. Typ. Max. Units
40
53
–––
–––
–––
…
„
Intrinsic turn-on time is negligible (turn-on is dominated by L
Calculated continuous current based on maximum allowable
Pulse width ≤ 300µs; duty cycle ≤ 2%.
package refer to Design Tip # 93-4
junction temperature;for recommended current-handling of the
3445 –––
1065 –––
0.04 –––
–––
––– 0.008
––– 0.012
–––
–––
–––
–––
––– -100
–––
–––
–––
257
270
–––
–––
223
18
32
64
84
104…
416
–––
–––
–––
250
–––
–––
–––
–––
–––
100
126
335
1.3
25
68
24
33
V/°C
nC
pF
nC
ns
Ω
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
di/dt = 100A/µs „
MOSFET symbol
integral reverse
p-n junction diode.
T
T
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 62A
= 62A
= 25°C, I
= 25°C, I
= 3.6Ω, V
= 0.4Ω, See Fig. 10 „
= V
= 40V, V
= 32V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 25V, I
= 32V, V
= 16V
= -16V
= 4.5V, See Fig. 6 and 13 „
= 20V
= 0V
GS
, I
D
S
F
D
D
D
= 250µA
D
GS
GS
GS
Conditions
= 62A, V
= 62A
Conditions
= 250µA
= 62A
= 62A „
= 52A „
= 0V
= 0V, T
= 4.5V
D
GS
= 1mA
J
= 150°C
= 0V „
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S
+L
D
G
)
G
D
S
S
D