STP16NS25FP STMicroelectronics, STP16NS25FP Datasheet

MOSFET N-CH 250V 16A TO-220FP

STP16NS25FP

Manufacturer Part Number
STP16NS25FP
Description
MOSFET N-CH 250V 16A TO-220FP
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet

Specifications of STP16NS25FP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
280 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
83nC @ 10V
Input Capacitance (ciss) @ Vds
1270pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP16NS25FP
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP16NS25FP
Manufacturer:
ST
0
Part Number:
STP16NS25FP
Manufacturer:
ST
Quantity:
20 000
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
May 2002
STP16NS25
STP16NS25FP
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
IDEAL FOR MONITOR’s B+ FUNCTION
Symbol
dv/dt (1)
I
V
DM
P
V
V
V
T
DGR
I
I
TOT
T
ISO
GS
stg
DS
D
D
TYPE
j
(
l
)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS
N-CHANNEL 250V - 0.23 - 16A TO-220 / TO-220FP
(on) = 0.23
250 V
250 V
V
DSS
< 0.28
< 0.28
R
Parameter
DS(on)
C
GS
= 25°C
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
16 A
16 A
I
D
(1) I
(*) Limited only by maximum temperature allowed
MESH OVERLAY™ MOSFET
SD
INTERNAL SCHEMATIC DIAGRAM
16A, di/dt 300 A/ s, V
STP16NS25
TO-220
140
16
11
64
1
-
1
–65 to 150
STP16NS25FP
2
Value
± 20
3
250
250
5
DD
STP16NS25
V
STP16NS25FP
(BR)DSS
16(*)
64(*)
2500
11(*)
0.33
TO-220FP
40
, Tj T
jMAX
1
2
W/°C
Unit
V/ns
3
°C
W
V
V
V
A
A
A
V
1/9

Related parts for STP16NS25FP

STP16NS25FP Summary of contents

Page 1

... MESH OVERLAY™ MOSFET R I DS(on INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25°C C (1) I 16A, di/dt 300 (*) Limited only by maximum temperature allowed STP16NS25 STP16NS25FP TO-220 TO-220FP Value STP16NS25 STP16NS25FP 250 250 ± 16(*) 11 11(*) 64 64(*) 140 2500 –65 to 150 (BR)DSS jMAX Unit ...

Page 2

... STP16NS25 - STP16NS25FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... Forward On Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Reverse Recovery Current RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. Safe Operating Area for TO-220 STP16NS25 - STP16NS25FP Test Conditions Min 125 4 (see test circuit, Figure 3) ...

Page 4

... STP16NS25 - STP16NS25FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics STP16NS25 - STP16NS25FP Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

... STP16NS25 - STP16NS25FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 Dia STP16NS25 - STP16NS25FP MAX. MIN. 4.60 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 14.0 0.511 2.95 ...

Page 8

... STP16NS25 - STP16NS25FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/9 TO-220FP MECHANICAL DATA mm TYP. MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 ...

Page 9

... STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. STP16NS25 - STP16NS25FP © http://www.st.com 9/9 ...

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