IRL1104STRLPBF International Rectifier, IRL1104STRLPBF Datasheet

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IRL1104STRLPBF

Manufacturer Part Number
IRL1104STRLPBF
Description
MOSFET N-CH 40V 104A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1104STRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 62A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
104A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 4.5V
Input Capacitance (ciss) @ Vds
3445pF @ 25V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description
l
l
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRL1104L) is available for low-
profile applications.
www.irf.com
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
D
D
AR
DM
GS
AS
STG
D
D
AR
J
θJC
θJA
@ T
@ T
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL1104S)
Low-profile through-hole (IRL1104L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
@T
2
Pak is a surface mount power package capable of
C
C
A
C
= 25°C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
Parameter
Parameter
GS
GS
2
Pak is
@ 10V…
@ 10V…
G
300 (1.6mm from case )
Typ.
–––
–––
IRL1104SPbF
IRL1104LPbF
D Pak
HEXFET
2
-55 to + 175
D
S
Max.
104
416
167
340
74
2.4
1.1
±16
5.0
62
17
®
R
TO-262
Power MOSFET
DS(on)
Max.
V
I
0.9
D
40
DSS
= 104A†
= 0.008Ω
= 40V
PD -95576
Units
Units
W/°C
V/ns
mJ
mJ
°C
W
W
A
V
A
07/19/04
1

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IRL1104STRLPBF Summary of contents

Page 1

... Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRL1104S/LPbF V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 10 2.7V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

Page 4

IRL1104S/LPbF 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 ...

Page 5

LIMITED BY PACKAGE 100 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE ...

Page 6

IRL1104S/LPbF D.U 10V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFETS www.irf.com Peak Diode Recovery dv/dt ...

Page 8

IRL1104S/LPbF 2 Dimensions are shown in millimeters (inches 530S WIT CODE 8024 02, 2000 ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPL IRL 3103L L OT CODE 1789 19, 1997 IN ...

Page 10

IRL1104S/LPbF 2 Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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