IXTU05N100 | |
|---|---|
| Manufacturer Part Number | IXTU05N100 |
| Description | MOSFET N-CH 1000V 750MA TO-251 |
| Manufacturer | IXYS |
| IXTU05N100 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
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Payment terms
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- If you still have any questions - please contact us
Specifications of IXTU05N100 | |||
|---|---|---|---|
| Fet Type | MOSFET N-Channel, Metal Oxide | Fet Feature | Standard |
| Rds On (max) @ Id, Vgs | 17 Ohm @ 375mA, 10V | Drain To Source Voltage (vdss) | 1000V (1kV) |
| Current - Continuous Drain (id) @ 25° C | 750mA | Vgs(th) (max) @ Id | 4.5V @ 250µA |
| Gate Charge (qg) @ Vgs | 7.8nC @ 10V | Input Capacitance (ciss) @ Vds | 260pF @ 25V |
| Power - Max | 40W | Mounting Type | Through Hole |
| Package / Case | IPak, TO-251 (2 straight leads + tab) | Vdss, Max, (v) | 1000 |
| Id(cont), Tc=25°c, (a) | 0.75 | Rds(on), Max, Tj=25°c, (?) | 17 |
| Ciss, Typ, (pf) | 260 | Qg, Typ, (nc) | 7.8 |
| Trr, Typ, (ns) | 710 | Pd, (w) | 40 |
| Rthjc, Max, (k/w) | 3.1 | Package Style | TO-251 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | ||
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PrevNext
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
≤ I
≤ V
dv/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6mm (0.062 in.) from case for 10s
L
T
Plastic body for 10s
SOLD
F
Mounting force
C
Weight
TO-251
TO-252
Symbol
Test Conditions
(T
= 25°C, unless otherwise specified)
J
BV
V
= 0V, I
= 250μA
DSS
GS
D
V
V
= V
, I
= 250μA
GS(th)
DS
GS
D
= ± 30V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0V
GS
R
V
= 10V, I
= 375mA, Note 1
DS(on)
GS
D
© 2009 IXYS CORPORATION, All rights reserved
IXTU05N100
IXTY05N100
Maximum Ratings
1000
= 1MΩ
1000
GS
±30
±40
750
3
JM
1
100
=150°C
3
J
40
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
0.40
0.35
Characteristic Values
Min.
Typ.
1000
2.5
T
= 125°C
J
V
=
1000V
DSS
I
=
750mA
D25
≤ ≤ ≤ ≤ ≤
17Ω Ω Ω Ω Ω
R
DS(on)
TO-251
G
D
V
S
V
V
TO-252
V
mA
G
A
S
A
mJ
V/ns
G = Gate
D
S = Source
TAB = Drain
W
°C
°C
°C
Features
°C
International standard packages
°C
Fast switching times
Nm/lb.in.
Avalanche Rated
Rugged polysilicon gate cell structure
g
g
Extended FBSOA
Applications
Switch-mode and resonant-mode
power supplies
Max.
Flyback inverters
DC choppers
V
4.5
V
Advantages
±100 nA
High power density
25 μA
Space savings
500 μA
Ω
17
D (TAB)
D (TAB)
= Drain
DS100102(01/09)
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IXTU05N100 Summary of contents |
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