IRF6713STRPBF International Rectifier, IRF6713STRPBF Datasheet

MOSFET N-CH 25V 22A DIRECTFET-SQ

IRF6713STRPBF

Manufacturer Part Number
IRF6713STRPBF
Description
MOSFET N-CH 25V 22A DIRECTFET-SQ
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6713STR1PBF.pdf (9 pages)

Specifications of IRF6713STRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
2.4V @ 50µA
Gate Charge (qg) @ Vgs
32nC @ 4.5V
Input Capacitance (ciss) @ Vds
2880pF @ 13V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric SQ
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.6 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
95 A
Power Dissipation
42 W
Gate Charge Qg
21 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF6713STRPBF
Manufacturer:
TI
Quantity:
36
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF6713STRPBF
Manufacturer:
IR
Quantity:
20 000
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Description
The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6713SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6713SPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
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www.irf.com
V
V
I
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Absolute Maximum Ratings
D
D
D
DM
AR
DS
GS
AS
RoHS Compliant Containing No Lead and Bromide 
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
application
@ T
@ T
@ T
SQ
A
A
C
5
4
3
2
1
= 25°C
= 70°C
= 25°C
2
Fig 1. Typical On-Resistance Vs. Gate Voltage
SX
4
V GS, Gate -to -Source Voltage (V)
T J = 25°C
6
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
8
10
T J = 125°C
Ãg
12
g
I D = 22A
Parameter
14
MQ
GS
GS
GS
@ 10V
@ 10V
@ 10V
h
16
f
MX
„
…
†
25V max ±20V max 2.2mΩ@ 10V 3.5mΩ@ 4.5V
Q
21nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
DSS
measured with thermocouple mounted to top (Drain) of part.
6.0
5.0
4.0
3.0
2.0
1.0
0.0
MT
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

0
J
6.3nC
= 25°C, L = 0.23mH, R
Q
I D = 17A
IRF6713STRPbF
gd
V
DirectFET™ Power MOSFET ‚
GS
MP
SQ
Q G Total Gate Charge (nC)
2.7nC
Q
IRF6713SPbF
V DS = 20V
V DS = 13V
gs2
10
Max.
170
±20
25
22
17
95
34
17
R
DS(on)
G
18nC
Q
= 25Ω, I
rr
DirectFET™ ISOMETRIC
TM
20
AS
packaging to achieve
14nC
Q
= 17A.
oss
R
DS(on)
Units
V
mJ
1.9V
V
A
A
08/19/08
gs(th)
30
1

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IRF6713STRPBF Summary of contents

Page 1

... Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 0.23mH IRF6713SPbF IRF6713STRPbF DirectFET™ Power MOSFET ‚ DS(on) DS(on gs2 rr oss 2.7nC ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 ...

Page 5

150° 25° -40° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward ...

Page 6

DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 8

DirectFET™ Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC CODE ...

Page 9

DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: CONTROLLING DIMENSIONS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered ...

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