IRF6725MTRPBF International Rectifier, IRF6725MTRPBF Datasheet

MOSFET N-CH 30V 28A DIRECTFET

IRF6725MTRPBF

Manufacturer Part Number
IRF6725MTRPBF
Description
MOSFET N-CH 30V 28A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6725MTR1PBF.pdf (9 pages)

Specifications of IRF6725MTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.2 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
54nC @ 4.5V
Input Capacitance (ciss) @ Vds
4700pF @ 15V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.2 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
170 A
Power Dissipation
100 W
Gate Charge Qg
36 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
IRF6725MTRPBF
Quantity:
9 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF6725MTRPBF
Quantity:
5 703
Description
The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6725MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6725MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚
ƒ
l
l
l
l
l
l
l
l
l
l
www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AR
DS
GS
AS
RoHS Compliant and Halogen Free 
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
application
SQ
Fig 1. Typical On-Resistance vs. Gate Voltage
A
A
C
6
5
4
3
2
1
0
= 25°C
= 70°C
= 25°C
0
T J = 25°C
SX
V GS, Gate -to -Source Voltage (V)
5
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
10
T J = 125°C
Ãg
g
15
Parameter
I D = 28A
GS
GS
GS
MQ
@ 10V
@ 10V
@ 10V
h
20
f
MX
„
…
†
30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V
Q
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
36nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
DSS
measured with thermocouple mounted to top (Drain) of part.
5.0
4.0
3.0
2.0
1.0
0.0
MT

0
J
= 25°C, L = 0.75mH, R
11nC
Q
I D = 22A
IRF6725MTRPbF
gd
V
5
DirectFET™ Power MOSFET ‚
GS
MP
MX
Q G , Total Gate Charge (nC)
10
IRF6725MPbF
3.9nC
Q
V DS = 24V
V DS = 15V
gs2
15
Max.
170
220
190
±20
30
28
22
22
R
DS(on)
G
20
39nC
Q
= 25Ω, I
rr
25
DirectFET™ ISOMETRIC
TM
AS
packaging to achieve
21nC
Q
= 22A.
30
oss
R
35
DS(on)
Units
V
mJ
04/30/09
1.8V
V
A
A
gs(th)
40
1

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IRF6725MTRPBF Summary of contents

Page 1

... Fig 1. Typical On-Resistance vs. Gate Voltage  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com IRF6725MTRPbF V DSS 30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4. tot 36nC 11nC  ...

Page 2

IRF6725MPbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° 25°C Power Dissipation D C Peak Soldering Temperature Operating Junction and J T Storage Temperature ...

Page 4

IRF6725MPbF 1000 100 10 1 2.3V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 ...

Page 5

150°C 100 25° -40° 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

IRF6725MPbF DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18. ™ www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G ...

Page 8

IRF6725MPbF ™ DirectFET™ Part Marking 8 DIMENSIONS METRIC CODE MIN MAX MIN A 0.246 6.25 6.35 B 0.189 4.80 5.05 C 3.85 3.95 0.152 D 0.35 0.45 0.014 0.027 E 0.68 0.72 F 0.72 0.027 0.68 G 1.42 0.054 1.38 ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6725MTRPBF). For 1000 parts on 7" reel, order IRF6725MTR1PBF CODE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

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