IRF6714MTRPBF International Rectifier, IRF6714MTRPBF Datasheet

IRF6714MTRPBF

Manufacturer Part Number

IRF6714MTRPBF

Description

MOSFET N-CH 25V 29A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6714MTRPBF.pdf (9 pages)

Specifications of IRF6714MTRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2.1 mOhm @ 29A, 10V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

29A

Vgs(th) (max) @ Id

2.4V @ 100µA

Gate Charge (qg) @ Vgs

44nC @ 4.5V

Input Capacitance (ciss) @ Vds

3890pF @ 13V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MX

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

3.4 mOhms

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

166 A

Power Dissipation

89 W

Gate Charge Qg

29 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

www.irf.com

Description

The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck

including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt

immunity for synchronous FET applications.

Absolute Maximum Ratings

RoHs Compliant and Halogen Free

Low Profile (<0.6 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for Sync. FET socket of Sync. Buck Converter

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

100% Rg tested

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

T J = 25°C

Fig 1. Typical On-Resistance Vs. Gate Voltage

V GS, Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

I D = 29A

Parameter

@ 10V

„

…

†

25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V

29nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

measured with thermocouple mounted to top (Drain) of part.

DSS

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

I D = 23A

8.3nC

= 25°C, L = 0.651mH, R

IRF6714MTRPbF

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

IRF6714MPbF

V DS = 20V

V DS = 13V

4.1nC

gs2

Max.

166

234

175

±20

DS(on)

36nC

= 25Ω, I

DirectFET™ ISOMETRIC

packaging to achieve

23nC

= 23A.

oss

DS(on)

Units

1.9V

04/29/09

gs(th)

Related parts for IRF6714MTRPBF

IRF6714MTRPBF Summary of contents

Page 1

... Fig 1. Typical On-Resistance Vs. Gate Voltage Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com IRF6714MTRPbF V DSS 25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4. tot gd 29nC 8 ...

Page 2

Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° 25°C Power Dissipation D C Peak Soldering Temperature Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 ...

Page 5

150° 25° -40° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward ...

Page 6

DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time ...

Page 7

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 18. ™ www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS ...

Page 8

DIM EN SION S METRIC CO DE MIN 6.25 6.35 0.246 B 4.80 5.05 0.189 0.152 C 3.85 3.95 D 0.35 0.45 0.014 0.027 E 0.68 0.72 0.027 F 0.68 0.72 G 1.42 0.054 ...

Page 9

... NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6714MTRPBF). For 1000 parts on 7" reel, order IRF6714MTR1PBF STANDARD OPTION (QTY 4800) CODE NOTE: CONTROLLING DIMENSIONS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com REEL DIMENSIONS ...

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