MOSFET N-CH 800V 2.5A TO-220

STP3NK80Z

Manufacturer Part NumberSTP3NK80Z
DescriptionMOSFET N-CH 800V 2.5A TO-220
ManufacturerSTMicroelectronics
SeriesSuperMESH™
STP3NK80Z datasheets
 


Specifications of STP3NK80Z

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs4.5 Ohm @ 1.25A, 10VDrain To Source Voltage (vdss)800V
Current - Continuous Drain (id) @ 25° C2.5AVgs(th) (max) @ Id4.5V @ 50µA
Gate Charge (qg) @ Vgs19nC @ 10VInput Capacitance (ciss) @ Vds485pF @ 25V
Power - Max70WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)4.5 Ohms
Forward Transconductance Gfs (max / Min)2.1 SDrain-source Breakdown Voltage800 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current2.5 A
Power Dissipation70 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Continuous Drain Current Id2.5ADrain Source Voltage Vds800V
On Resistance Rds(on)4.5ohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ3.75VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-4379-5
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N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK
Zener-protected SuperMESH™ Power MOSFET
Features
V
DSS
Type
(@Tjmax)
STP3NK80Z
800 V
STF3NK80Z
800 V
STD3NK80Z
800 V
STD3NK80Z-1
800 V
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Application
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Table 1.
Device summary
Order codes
STP3NK80Z
STF3NK80Z
STD3NK80ZT4
STD3NK80Z-1
September 2009
STD3NK80Z, STD3NK80Z-1
STF3NK80Z, STP3NK80Z
R
I
DS(on)
D
< 4.5 Ω
2.5 A
< 4.5 Ω
2.5 A
< 4.5 Ω
2.5 A
< 4.5 Ω
2.5 A
Figure 1.
Marking
P3NK80Z
F3NK80Z
D3NK80Z
D3NK80Z
Doc ID 9565 Rev 6
TO-220FP
TO-220
3
1
DPAK
IPAK
Internal schematic diagram
D(2)
G(1)
S(3)
Package
Packaging
TO-220
Tube
TO-220FP
Tube
DPAK
Tape and reel
IPAK
Tube
3
2
1
3
2
1
AM01476v1
1/18
www.st.com
18

STP3NK80Z Summary of contents

  • Page 1

    ... Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Table 1. Device summary Order codes STP3NK80Z STF3NK80Z STD3NK80ZT4 STD3NK80Z-1 September 2009 STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z R I DS(on) D < 4.5 Ω 2.5 A < 4.5 Ω 2.5 A < 4.5 Ω 2.5 A < 4.5 Ω ...

  • Page 2

    ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Doc ID 9565 Rev ...

  • Page 3

    ... STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor Gate source ESD V ESD(G-S) (HBM-C=100 pF, R=1.5 kΩ) ...

  • Page 4

    ... Electrical ratings Table 4. Avalanche characteristics Symbol Avalanche current, repetitive or not-repetitive I AR (pulse width limited by Tj Max) Single pulse avalanche energy E AS (starting Tj=25 °C, I 4/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Parameter = = Doc ID 9565 Rev 6 Value Unit 2.5 A 170 mJ ...

  • Page 5

    ... STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( Gate threshold voltage GS(th) Static drain-source on R DS(on) resistance Table 6. ...

  • Page 6

    ... ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 6/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Parameter Test conditions ...

  • Page 7

    ... STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, DPAK, IPAK Figure 4. Safe operating area for TO-220FP Figure 6. Output characteristics Figure 3. Thermal impedance for TO-220, DPAK, IPAK Figure 5. Thermal impedance for TO-220FP Figure 7. Transfer characteristics Doc ID 9565 Rev 6 ...

  • Page 8

    ... Electrical characteristics Figure 8. Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature 8/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Figure 9. Static drain-source on resistance Figure 13. Normalized on resistance vs temperature Doc ID 9565 Rev 6 ...

  • Page 9

    ... STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Figure 14. Source-drain diode forward characteristics Figure 16. Maximum avalanche energy vs temperature Figure 15. Normalized B Doc ID 9565 Rev 6 Electrical characteristics vs temperature VDSS 9/18 ...

  • Page 10

    ... A D FAST L=100µH G D.U.T. DIODE Ω Figure 21. Unclamped inductive waveform 10/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Figure 18. Gate charge test circuit 3.3 2200 µF µ =20V AM01468v1 Figure 20. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 22. Switching time waveform ...

  • Page 11

    ... STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 9565 Rev 6 Package mechanical data ® ...

  • Page 12

    ... Package mechanical data Dim L20 L30 ∅P Q 12/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16 ...

  • Page 13

    ... STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Dim TO-220FP mechanical data Dia Doc ID 9565 Rev 6 Package mechanical data 7012510_Rev_J G 13/18 ...

  • Page 14

    ... Package mechanical data DIM 14/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 2.28 4.40 9.35 1 2.80 0.80 0.60 0. Doc ID 9565 Rev 6 max. 2.40 1.10 0.23 0.90 5.40 ...

  • Page 15

    ... STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z DIM (L1 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0. Doc ID 9565 Rev 6 Package mechanical data max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 4.60 9 ...

  • Page 16

    ... D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7 15.7 16/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z TAPE AND REEL SHIPMENT inch MIN. MAX. 7 0.267 0.275 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 0.059 1.85 0.065 0.073 7.6 0.291 0.299 2.75 0.100 0.108 4 ...

  • Page 17

    ... STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 6 Revision history Table 9. Revision history Date 09-Sep-2004 10-Aug-2006 26-Feb-2009 07-Sep-2009 Revision 3 Complete document 4 New template, no content change 5 Updated mechanical data 6 V value has been corrected ESD(G-S) Doc ID 9565 Rev 6 Revision history Changes 17/18 ...

  • Page 18

    ... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 18/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www ...