STP3NK80Z STMicroelectronics, STP3NK80Z Datasheet - Page 5

• Manufacturer Part Number: STP3NK80Z
• Description: MOSFET N-CH 800V 2.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP3NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 Ohms
• Forward Transconductance Gfs (max / Min): 2.1 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 4.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4379-5

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
g
t
t
increases from 0 to 80% V
I
C
I
C
DS(on)
C
Q
GS(th)
d(on)
d(off)
Q
GSS
DSS
fs
Q
oss eq.
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
GS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 9565 Rev 6
V
V
V
V
R
(see
V
V
I
V
V
Tc = 125 °C
V
V
V
D
DS
DS
GS
GS
DD
DD
GS
DS
DS
GS
DS
GS
G
= 1 mA, V
= 4.7 Ω, V
=0
=0, V
=400 V, I
=640 V, I
=15 V, I
=25 V, f=1 MHz,
=10 V
= max rating,
= max rating,
= ± 20 V
= V
= 10 V, I
Figure
Test conditions
Test conditions
GS
DS
, I
D
19)
D
=0 to 640 V
GS
D
D
D
GS
= 1.25 A
= 50 µA
= 1.25 A,
= 2.5 A
= 1.25 A
= 0
=10 V
Min.
Min.
800
Electrical characteristics
3
-
-
-
-
-
Typ.
Typ.
10.8
3.75
485
2.1
3.2
3.8
57
11
22
17
27
36
40
19
oss
Max.
Max.
±
4.5
4.5
when V
50
10
1
-
-
-
-
-
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
5/18