STP3NK80Z STMicroelectronics, STP3NK80Z Datasheet - Page 6

• Manufacturer Part Number: STP3NK80Z
• Description: MOSFET N-CH 800V 2.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP3NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 Ohms
• Forward Transconductance Gfs (max / Min): 2.1 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 4.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4379-5

Electrical characteristics
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Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 8.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
I
V
SDM
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
RRM
RRM
I
SD
GSO
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs=± 1mA (open drain)
Gate-source Zener diode
Source drain diode
Parameter
Parameter
Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
I
I
di/dt = 100 A/µs,
V
(see
I
di/dt = 100 A/µs,
V
(see
SD
SD
SD
DD
DD
= 2.5 A, V
= 2.5 A,
= 2.5 A,
Test conditions
=50 V
=50 V, Tj=150 °C
Test conditions
Figure
Figure
21)
21)
GS
=0
Min
Min.
-
-
-
-
-
30
1600
2100
Typ.
384
474
8.4
8.8
Typ.
-
Max
Max.
2.5
1.6
10
-
Unit
Unit
µC
µC
ns
ns
A
A
V
A
A
V