IRF6716MTRPBF International Rectifier, IRF6716MTRPBF Datasheet

MOSFET N-CH 25V 39A DIRECTFET

IRF6716MTRPBF

Manufacturer Part Number
IRF6716MTRPBF
Description
MOSFET N-CH 25V 39A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6716MTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
2.4V @ 100µA
Gate Charge (qg) @ Vgs
59nC @ 4.5V
Input Capacitance (ciss) @ Vds
5150pF @ 13V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Transistor Polarity
N Channel
Continuous Drain Current Id
39A
Drain Source Voltage Vds
25V
On Resistance Rds(on)
1.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.9V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
2.6 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
39 A
Power Dissipation
78 W
Gate Charge Qg
39 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
l
l
l
l
l
l
l
l
l
l
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Description
The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6716MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.

ƒ
Notes:
www.irf.com
Absolute Maximum Ratings
V
V
I
I
I
I
E
I
D
D
D
DM
AR
DS
GS
AS
RoHs Compliant and Halogen Free
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
100% Rg tested
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Low Profile (<0.6 mm)
@ T
@ T
@ T
SQ
A
A
C
6
5
4
3
2
1
0
= 25°C
= 70°C
= 25°C
2
Fig 1. Typical On-Resistance vs. Gate Voltage
SX
3
T J = 25°C
V GS, Gate -to -Source Voltage (V)
4
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
5
ST
6
T J = 125°C
7
Ãg
g
8
Parameter
I D = 40A
GS
GS
GS
9
MQ
@ 10V
@ 10V
@ 10V
h
10
f
MX
25V max ±20V max
Q
39nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
g tot
C
DSS
measured with thermocouple mounted to top (Drain) of part.
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
MT

0
J
12nC
= 25°C, L = 0.65mH, R
Q
I D = 32A
gd
V
10
DirectFET™ Power MOSFET ‚
GS
MP
MX
Q G Total Gate Charge (nC)
IRF6716MTRPbF
V DS = 20V
V DS = 13V
5.3nC
Q
gs2
20
1.2mΩ@10V
Max.
IRF6716MPbF
180
320
330
±20
25
39
31
32
R
DS(on)
G
28nC
30
Q
= 25Ω, I
rr
DirectFET™ ISOMETRIC
TM
40
AS
packaging to achieve
27nC
Q
= 32A.
2.0mΩ@ 4.5V
oss
50
R
DS(on)
Units
V
04/30/09
mJ
1.9V
V
A
A
gs(th)
60
1

Related parts for IRF6716MTRPBF

IRF6716MTRPBF Summary of contents

Page 1

... Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 0.65mH IRF6716MPbF IRF6716MTRPbF DirectFET™ Power MOSFET ‚ DS(on) DS(on) 1.2mΩ@10V 2.0mΩ@ 4. ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings Power Dissipation 25° 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 100 10 2. Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 150° ...

Page 5

150° 25° -40° 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 200 175 150 125 100 ...

Page 6

DUT 20K Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit D.U. ≤ 1 ≤ 0.1 ...

Page 7

D.U.T + ƒ • • - • + ‚ „  R • G • • SD • Fig 18. ™ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com Driver Gate Drive ...

Page 8

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 DIMENSIONS IMPERIAL METRIC CODE MIN MAX MIN MAX A 0.246 6.25 6.35 0.250 0.189 B 4.80 5.05 0.201 C 3.85 3.95 0.152 0.156 D ...

Page 9

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6716). For 1000 parts on 7" reel, order IRF6716TR1 CODE Note: For the most current drawing please refer ...

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