STD2NK100Z STMicroelectronics, STD2NK100Z Datasheet

MOSFET N-CH 1000V 1.85A DPAK

STD2NK100Z

Manufacturer Part Number
STD2NK100Z
Description
MOSFET N-CH 1000V 1.85A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STD2NK100Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.85A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
499pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohm @ 10 V
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7964-2
STD2NK100Z

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD2NK100Z
Manufacturer:
ST
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Part Number:
STD2NK100Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STD2NK100Z
Quantity:
5 000
Part Number:
STD2NK100ZT4
Manufacturer:
ST
0
Features
Application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
Table 1.
June 2008
STD2NK100Z
STU2NK100Z
STP2NK100Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Switching applications
Type
STD2NK100Z
STP2NK100Z
STU2NK100Z
Order codes
Device summary
1000 V
1000 V
1000 V
V
N-channel 1000 V, 6.25 Ω , 1.85 A, TO-220, DPAK, IPAK
DSS
R
< 8.5 Ω
< 8.5 Ω
< 8.5 Ω
DS(on)
max
Zener-protected SuperMESH™ Power MOSFET
1.85 A
1.85 A
1.85 A
2NK100Z
2NK100Z
2NK100Z
I
Marking
D
70 W
70 W
70 W
P
STP2NK100Z - STU2NK100Z
TOT
Rev 2
Figure 1.
TO-220
Package
TO-220
DPAK
IPAK
Internal schematic diagram
1
2
3
STD2NK100Z
DPAK
1
3
Tape and reel
Packaging
IPAK
Tube
Tube
www.st.com
1
2
3
1/16
16

Related parts for STD2NK100Z

STD2NK100Z Summary of contents

Page 1

... Power MOSFETs. Table 1. Device summary Order codes STD2NK100Z STP2NK100Z STU2NK100Z June 2008 STP2NK100Z - STU2NK100Z TOT TO-220 Figure 1. Marking Package 2NK100Z DPAK 2NK100Z TO-220 2NK100Z IPAK Rev 2 STD2NK100Z IPAK 3 1 DPAK Internal schematic diagram Packaging Tape and reel Tube Tube www.st.com 1/16 16 ...

Page 2

... Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STD2NK100Z - STP2NK100Z - STU2NK100Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

... STD2NK100Z - STP2NK100Z - STU2NK100Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) Drain current (pulsed Total dissipation at T TOT Derating factor V G-S ESD (HBM C=100 pF, R=1.5 kΩ) ESD(G-S) (2) Peak diode recovery voltage slope ...

Page 4

... Total gate charge g Q Gate-source charge gs Gate-drain charge Pulsed: pulse duration = 300 µs, duty cycle 1. defined as constant equivalent capacitance giving the same charging time as C oss eq. increases from 0 to 80% V 4/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Parameter Test conditions mA Max rating Max rating,Tc=125 ° ± ...

Page 5

... STD2NK100Z - STP2NK100Z - STU2NK100Z Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time r Table 8. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 4. Safe operating area for DPAK, IPAK Figure 5. Figure 6. Output characteristics 6/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Figure 3. Thermal impedance for TO-220 Thermal impedance for DPAK, IPAK Figure 7. Transfer characteristics ...

Page 7

... STD2NK100Z - STP2NK100Z - STU2NK100Z Figure 8. Normalized B VDSS Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature vs temperature Figure 9. Figure 13. Normalized on resistance vs Electrical characteristics Static drain-source on resistance temperature 7/16 ...

Page 8

... Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Figure 15. Maximum avalanche energy vs temperature E mJ) AS( 190 180 I =1.85A D 170 160 150 140 130 120 110 100 AM00056v1 100 110 120 130 140 T (°C) J ...

Page 9

... STD2NK100Z - STP2NK100Z - STU2NK100Z 3 Test circuits Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive waveform Figure 17. Gate charge test circuit Figure 19. Unclamped inductive load test circuit Figure 21. Switching time waveform ...

Page 10

... These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/16 STD2NK100Z - STP2NK100Z - STU2NK100Z www.st.com ...

Page 11

... STD2NK100Z - STP2NK100Z - STU2NK100Z Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2 ...

Page 12

... Package mechanical data DIM (L1 12/16 STD2NK100Z - STP2NK100Z - STU2NK100Z TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0. max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 4.60 9.40 1.20 0068771_H ...

Page 13

... STD2NK100Z - STP2NK100Z - STU2NK100Z DIM TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 2.28 4.40 9.35 1 2.80 0.80 0.60 0. Package mechanical data max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10 ...

Page 14

... P0 3.9 4.1 P1 7.9 8.1 P2 1.9 2 15.7 16.3 14/16 STD2NK100Z - STP2NK100Z - STU2NK100Z TAPE AND REEL SHIPMENT inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 ...

Page 15

... STD2NK100Z - STP2NK100Z - STU2NK100Z 6 Revision history Table 10. Document revision history Date 24-Oct-2007 18-Jun-2008 Revision 1 First release – Inserted new package, mechanical data IPAK 2 – Document status promoted from preliminary data to datasheet. Revision history Changes 15/16 ...

Page 16

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16 STD2NK100Z - STP2NK100Z - STU2NK100Z Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www ...

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